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Hefei Purple Horn E-Commerce Co., Ltd.

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China Nexperia PBSS4230T 215 NPN BISS Transistor Providing Switching for LCD
China Nexperia PBSS4230T 215 NPN BISS Transistor Providing Switching for LCD

  1. China Nexperia PBSS4230T 215 NPN BISS Transistor Providing Switching for LCD

Nexperia PBSS4230T 215 NPN BISS Transistor Providing Switching for LCD

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 480mW
Transition frequency(fT) 230MHz
type NPN
Number 1 NPN
Current - Collector(Ic) 2A
Collector - Emitter Voltage VCEO 30V
Operating Temperature -65℃~+150℃
Description Bipolar (BJT) Transistor NPN 30V 2A 230MHz 480mW Surface Mount SOT-23
Mfr. Part # PBSS4230T,215
Package SOT-23
Model Number PBSS4230T,215

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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
Pd - Power Dissipation 480mW Transition frequency(fT) 230MHz
type NPN Number 1 NPN
Current - Collector(Ic) 2A Collector - Emitter Voltage VCEO 30V
Operating Temperature -65℃~+150℃ Description Bipolar (BJT) Transistor NPN 30V 2A 230MHz 480mW Surface Mount SOT-23
Mfr. Part # PBSS4230T,215 Package SOT-23
Model Number PBSS4230T,215

Product Overview

The Nexperia PBSS4230T is an NPN BISS transistor in a SOT23 package, designed for applications requiring ultra-low collector-emitter saturation voltage (VCEsat) and equivalent on-resistance (RCEsat). It offers high collector current capability, leading to increased efficiency and reduced heat generation. This makes it a cost-effective alternative to MOSFETs in specific applications. Key applications include power management (DC/DC conversion, supply line switching, battery chargers, LCD backlighting) and peripheral driving (low supply voltage applications, inductive loads like relays, buzzers, and motors).

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN BISS Transistor
  • Package Type: SOT23
  • PNP Complement: PBSS5230T

Technical Specifications

Parameter Conditions Min. Typ. Max. Unit
VCEO (Collector-emitter voltage) Open base - - 30 V
IC (Collector current, DC) - - - 2 A
ICM (Peak collector current) - - - 3 A
RCEsat (Equivalent on-resistance) IC = 500 mA; IB = 50 mA; note 1 - 140 200 m
VCEsat (Collector-emitter saturation voltage) IC = 100 mA; IB = 1 mA - 45 70 mV
VCEsat (Collector-emitter saturation voltage) IC = 500 mA; IB = 50 mA - 70 100 mV
VCEsat (Collector-emitter saturation voltage) IC = 750 mA; IB = 15 mA - 120 180 mV
VCEsat (Collector-emitter saturation voltage) IC = 1 A; IB = 50 mA; note 1 - 130 180 mV
VCEsat (Collector-emitter saturation voltage) IC = 2 A; IB = 200 mA; note 1 - 240 320 mV
hFE (DC current gain) VCE = 2 V; IC = 100 mA 350 470 - -
hFE (DC current gain) VCE = 2 V; IC = 500 mA 300 450 - -
hFE (DC current gain) VCE = 2 V; IC = 1 A 300 420 - -
hFE (DC current gain) VCE = 2 V; IC = 2 A 150 250 - -
fT (Transition frequency) IC = 100 mA; VCE = 10 V; f = 100 MHz 100 230 - MHz
Cc (Collector capacitance) VCB = 10 V; IE = Ie = 0; f = 1 MHz - 15 20 pF
VCBO (Collector-base voltage) Open emitter - - -40 V
VEBO (Emitter-base voltage) Open collector - - -5 V
IBM (Peak base current) - - - -300 mA
Ptot (Total power dissipation) Tamb 25 C; note 1 - - 300 mW
Ptot (Total power dissipation) Tamb 25 C; note 2 - - 480 mW
Tstg (Storage temperature) - -65 - 150 C
Tj (Junction temperature) - - - 150 C
Tamb (Operating ambient temperature) - -65 - 150 C
Rth j-a (Thermal resistance junction to ambient) in free air; note 1 - 417 - K/W
Rth j-a (Thermal resistance junction to ambient) in free air; note 2 - 260 - K/W
ICBO (Collector-base cut-off current) VCB = 30 V; IE = 0 - - 100 nA
ICBO (Collector-base cut-off current) VCB = 30 V; IE = 0; Tj = 150 C - - 50 A
IEBO (Emitter-base cut-off current) VEB = 4 V; IC = 0 - - 100 nA
VBEsat (Base-emitter saturation voltage) IC = 2 A; IB = 200 mA; note 1 - - 1.1 V
VBEon (Base-emitter turn-on voltage) VCE = 2 V; IC = 100 mA - - 0.75 V

Note 1: Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.

Note 2: Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm.

Note: Pulse test: tp 300 s; 0.02.


2410010131_Nexperia-PBSS4230T-215_C456109.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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