| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 480mW |
| Transition frequency(fT) | 230MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 2A |
| Collector - Emitter Voltage VCEO | 30V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 30V 2A 230MHz 480mW Surface Mount SOT-23 |
| Mfr. Part # | PBSS4230T,215 |
| Package | SOT-23 |
| Model Number | PBSS4230T,215 |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 480mW | Transition frequency(fT) | 230MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 2A | Collector - Emitter Voltage VCEO | 30V |
| Operating Temperature | -65℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 30V 2A 230MHz 480mW Surface Mount SOT-23 |
| Mfr. Part # | PBSS4230T,215 | Package | SOT-23 |
| Model Number | PBSS4230T,215 |
The Nexperia PBSS4230T is an NPN BISS transistor in a SOT23 package, designed for applications requiring ultra-low collector-emitter saturation voltage (VCEsat) and equivalent on-resistance (RCEsat). It offers high collector current capability, leading to increased efficiency and reduced heat generation. This makes it a cost-effective alternative to MOSFETs in specific applications. Key applications include power management (DC/DC conversion, supply line switching, battery chargers, LCD backlighting) and peripheral driving (low supply voltage applications, inductive loads like relays, buzzers, and motors).
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-emitter voltage) | Open base | - | - | 30 | V |
| IC (Collector current, DC) | - | - | - | 2 | A |
| ICM (Peak collector current) | - | - | - | 3 | A |
| RCEsat (Equivalent on-resistance) | IC = 500 mA; IB = 50 mA; note 1 | - | 140 | 200 | m |
| VCEsat (Collector-emitter saturation voltage) | IC = 100 mA; IB = 1 mA | - | 45 | 70 | mV |
| VCEsat (Collector-emitter saturation voltage) | IC = 500 mA; IB = 50 mA | - | 70 | 100 | mV |
| VCEsat (Collector-emitter saturation voltage) | IC = 750 mA; IB = 15 mA | - | 120 | 180 | mV |
| VCEsat (Collector-emitter saturation voltage) | IC = 1 A; IB = 50 mA; note 1 | - | 130 | 180 | mV |
| VCEsat (Collector-emitter saturation voltage) | IC = 2 A; IB = 200 mA; note 1 | - | 240 | 320 | mV |
| hFE (DC current gain) | VCE = 2 V; IC = 100 mA | 350 | 470 | - | - |
| hFE (DC current gain) | VCE = 2 V; IC = 500 mA | 300 | 450 | - | - |
| hFE (DC current gain) | VCE = 2 V; IC = 1 A | 300 | 420 | - | - |
| hFE (DC current gain) | VCE = 2 V; IC = 2 A | 150 | 250 | - | - |
| fT (Transition frequency) | IC = 100 mA; VCE = 10 V; f = 100 MHz | 100 | 230 | - | MHz |
| Cc (Collector capacitance) | VCB = 10 V; IE = Ie = 0; f = 1 MHz | - | 15 | 20 | pF |
| VCBO (Collector-base voltage) | Open emitter | - | - | -40 | V |
| VEBO (Emitter-base voltage) | Open collector | - | - | -5 | V |
| IBM (Peak base current) | - | - | - | -300 | mA |
| Ptot (Total power dissipation) | Tamb 25 C; note 1 | - | - | 300 | mW |
| Ptot (Total power dissipation) | Tamb 25 C; note 2 | - | - | 480 | mW |
| Tstg (Storage temperature) | - | -65 | - | 150 | C |
| Tj (Junction temperature) | - | - | - | 150 | C |
| Tamb (Operating ambient temperature) | - | -65 | - | 150 | C |
| Rth j-a (Thermal resistance junction to ambient) | in free air; note 1 | - | 417 | - | K/W |
| Rth j-a (Thermal resistance junction to ambient) | in free air; note 2 | - | 260 | - | K/W |
| ICBO (Collector-base cut-off current) | VCB = 30 V; IE = 0 | - | - | 100 | nA |
| ICBO (Collector-base cut-off current) | VCB = 30 V; IE = 0; Tj = 150 C | - | - | 50 | A |
| IEBO (Emitter-base cut-off current) | VEB = 4 V; IC = 0 | - | - | 100 | nA |
| VBEsat (Base-emitter saturation voltage) | IC = 2 A; IB = 200 mA; note 1 | - | - | 1.1 | V |
| VBEon (Base-emitter turn-on voltage) | VCE = 2 V; IC = 100 mA | - | - | 0.75 | V |
Note 1: Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
Note 2: Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm.
Note: Pulse test: tp 300 s; 0.02.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!