Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 1.7W |
| Transition frequency(fT) | 110MHz |
| type | NPN |
| Current - Collector(Ic) | 5.1A |
| Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 100V 5.1A 110MHz 1.7W Surface Mount SOT-223 |
| Mfr. Part # | PBSS306NZ,135 |
| Package | SOT-223 |
| Model Number | PBSS306NZ,135 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 1.7W | Transition frequency(fT) | 110MHz |
| type | NPN | Current - Collector(Ic) | 5.1A |
| Collector - Emitter Voltage VCEO | 100V | Operating Temperature | -65℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 100V 5.1A 110MHz 1.7W Surface Mount SOT-223 | Mfr. Part # | PBSS306NZ,135 |
| Package | SOT-223 | Model Number | PBSS306NZ,135 |
The Nexperia PBSS306NZ is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor housed in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. This transistor offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high collector current gain (hFE) at high IC. Its design contributes to high efficiency through reduced heat generation and requires a smaller Printed-Circuit Board (PCB) area compared to conventional transistors.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 100 | V |
| IC | Collector current | - | - | - | 5.1 | A |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 10.2 | A |
| RCEsat | Collector-emitter saturation resistance | IC = 4 A; IB = 200 mA [1] | - | 43 | 60 | m |
| VCBO | Collector-base voltage | Open emitter | - | - | 100 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 0.7 | W |
| Ptot | Total power dissipation | Tamb 25 C [2] | - | - | 1.7 | W |
| Ptot | Total power dissipation | Tamb 25 C [3] | - | - | 2.0 | W |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | +150 | C |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | [1] | - | - | 179 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | [2] | - | - | 74 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | [3] | - | - | 63 | K/W |
| Rth(j-sp) | Thermal resistance junction to solder point | - | - | - | 15 | K/W |
| hFE | DC current gain | VCE = 2 V; IC = 0.5 A [1] | 200 | 330 | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 1 A [1] | 150 | 270 | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 2 A [1] | 100 | 175 | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 4 A [1] | 50 | 85 | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 5 A [1] | 30 | 60 | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 0.5 A; IB = 50 mA [1] | - | 27 | 40 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 50 mA [1] | - | 53 | 75 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 10 mA [1] | - | 100 | 150 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 2 A; IB = 40 mA [1] | - | 115 | 165 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 4 A; IB = 200 mA [1] | - | 170 | 240 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 4 A; IB = 400 mA [1] | - | 155 | 220 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 5.1 A; IB = 255 mA [1] | - | 215 | 300 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 1 A; IB = 100 mA [1] | - | 0.81 | 0.9 | V |
| VBEsat | Base-emitter saturation voltage | IC = 4 A; IB = 400 mA [1] | - | 0.94 | 1.05 | V |
| VBEon | Base-emitter turn-on voltage | VCE = 2 V; IC = 2 A [1] | - | 0.78 | 0.85 | V |
| td | Delay time | VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = 0.15 A | - | 15 | - | ns |
| tr | Rise time | - | - | 315 | - | ns |
| ton | Turn-on time | - | - | 330 | - | ns |
| ts | Storage time | - | - | 240 | - | ns |
| tf | Fall time | - | - | 290 | - | ns |
| toff | Turn-off time | - | - | 530 | - | ns |
| fT | Transition frequency | VCE = 10 V; IC = 100 mA; f = 100 MHz | - | 110 | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; f = 1 MHz | - | 23 | 40 | pF |
[1] Pulse test: tp 300 s; 0.02.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
| Type Number | Package Name | Description |
|---|---|---|
| PBSS306NZ | SC-73 | Plastic surface-mounted package with increased heatsink; 4 leads SOT223 |
| Type Number | Marking Code |
|---|---|
| PBSS306NZ | S306NZ |
SOT223 (SC-73)
Dimensions in mm:
Length: 6.3 to 6.7
Width: 2.9 to 3.1
Height: 1.5 to 1.8
Lead spacing: 4.6 to 7.3
| Type Number | Package | Description | Packing Quantity |
|---|---|---|---|
| PBSS306NZ | SOT223 | 8 mm pitch, 12 mm tape and reel | 1000 / 4000 |
For more information, please visit: www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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