Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 9V |
| Current - Collector Cutoff | 100uA |
| DC Current Gain | 10@2A,5V |
| Transition frequency(fT) | - |
| Vce Saturation(VCE(sat)) | 1V@4A,1A |
| type | NPN |
| Pd - Power Dissipation | 75W |
| Current - Collector(Ic) | 4A |
| Collector - Emitter Voltage VCEO | 400V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 400V 4A 75W Through Hole TO-220AB |
| Mfr. Part # | PHE13005,127 |
| Package | TO-220AB |
| Model Number | PHE13005,127 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 9V | Current - Collector Cutoff | 100uA |
| DC Current Gain | 10@2A,5V | Transition frequency(fT) | - |
| Vce Saturation(VCE(sat)) | 1V@4A,1A | type | NPN |
| Pd - Power Dissipation | 75W | Current - Collector(Ic) | 4A |
| Collector - Emitter Voltage VCEO | 400V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 400V 4A 75W Through Hole TO-220AB | Mfr. Part # | PHE13005,127 |
| Package | TO-220AB | Model Number | PHE13005,127 |
The PHE13005 is a high voltage, high speed NPN planar-passivated power switching transistor designed for electronic lighting ballast applications. It offers fast switching and high voltage capability, making it suitable for demanding electronic lighting systems.
| Symbol | Parameter | Conditions | Values | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| VCESM | Peak collector-emitter voltage | VBE = 0 V | 700 | V |
| VCBO | Collector-base voltage | IE = 0 A | 700 | V |
| VCEO | Collector-emitter voltage | IB = 0 A | 400 | V |
| IC | Collector current (DC) | DC; Fig. 1; Fig. 2; Fig. 4 | 4 | A |
| ICM | Peak collector current | 8 | A | |
| IB | Base current (DC) | 2 | A | |
| IBM | Peak base current | 4 | A | |
| Ptot | Total power dissipation | Tmb 25 C; Fig. 3 | 75 | W |
| Tstg | Storage temperature | -65 to 150 | C | |
| Tj | Junction temperature | 150 | C | |
| VEBO | Emitter-base voltage | IC = 0 A | 9 | V |
| Static Characteristics | ||||
| ICES | Collector-emitter cut-off current | VBE = -1.5 V; VCE = 700 V; Tmb = 25 C | - | 1 mA |
| ICES | Collector-emitter cut-off current | VBE = -1.5 V; VCE = 700 V; Tj = 125 C | - | 5 mA |
| ICBO | Collector-base cut-off current | VCB = 700 V; IE = 0 A; Tmb = 25 C | - | 1 mA |
| ICEO | Collector-emitter cut-off current | VCEO = 400 V; IB = 0 A; Tmb = 25 C | - | 0.1 mA |
| IEBO | Emitter-base cut-off current | VEB = 9 V; IC = 0 A; Tmb = 25 C | - | 1 mA |
| VCEOsus | Collector-emitter sustaining voltage | IB = 0 A; IC = 10 mA; LC = 25 mH; Tmb = 25 C; Fig. 6; Fig. 7 | 400 | V |
| VCEsat | Collector-emitter saturation voltage | IC = 1.0 A; IB = 0.2 A; Tmb = 25 C; Fig. 8; Fig. 9 | - | 0.5 V |
| VCEsat | Collector-emitter saturation voltage | IC = 2.0 A; IB = 0.5 A; Tmb = 25 C; Fig. 8; Fig. 9 | - | 0.6 V |
| VCEsat | Collector-emitter saturation voltage | IC = 4.0 A; IB = 1.0 A; Tmb = 25 C; Fig. 8; Fig. 9 | - | 1 V |
| VBEsat | Base-emitter saturation voltage | IC = 1.0 A; IB = 0.2 A; Tmb = 25 C; Fig. 10 | - | 1.2 V |
| VBEsat | Base-emitter saturation voltage | IC = 2.0 A; IB = 0.5 A; Tmb = 25 C; Fig. 10 | - | 1.6 V |
| hFE | DC current gain | IC = 1 A; VCE = 5 V; Tmb = 25 C; Fig. 11 | 12 to 40 | |
| hFE | DC current gain | IC = 2 A; VCE = 5 V; Tmb = 25 C; Fig. 11 | 10 to 28 | |
| Dynamic Characteristics | ||||
| ts | Storage time | IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; Tmb = 25 C; resistive load; Fig. 12; Fig. 13 | - | 4 s |
| ts | Storage time | IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 25 C; inductive load; Fig. 14; Fig. 15 | - | 2 s |
| ts | Storage time | IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 100 C; inductive load; Fig. 14; Fig. 15 | - | 4 s |
| tf | Fall time | IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A; RL = 75 ; Tmb = 25 C; resistive load; Fig. 12; Fig. 13 | - | 0.9 s |
| tf | Fall time | IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 25 C; inductive load; Fig. 14; Fig. 15 | - | 0.5 s |
| tf | Fall time | IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 H; Tmb = 100 C; inductive load; Fig. 14; Fig. 15 | - | 0.9 s |
| Thermal Characteristics | ||||
| Rth(j-mb) | Thermal resistance from junction to mounting base | Fig. 5 | - | 1.67 K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air | - | 60 K/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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