| Current - Collector Cutoff | 100uA |
| DC Current Gain | - |
| Transition frequency(fT) | - |
| Number | 1 NPN |
| Vce Saturation(VCE(sat)) | 1.5V@1.5A,0.5A |
| type | NPN |
| Pd - Power Dissipation | 2.1W |
| Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 400V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Through Hole TO-92 |
| Mfr. Part # | PHD13003C,412 |
| Package | TO-92 |
| Model Number | PHD13003C,412 |
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Product Specification
| Current - Collector Cutoff | 100uA | DC Current Gain | - |
| Transition frequency(fT) | - | Number | 1 NPN |
| Vce Saturation(VCE(sat)) | 1.5V@1.5A,0.5A | type | NPN |
| Pd - Power Dissipation | 2.1W | Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 400V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Through Hole TO-92 | Mfr. Part # | PHD13003C,412 |
| Package | TO-92 | Model Number | PHD13003C,412 |
The PHD13003C is a high voltage, high speed, planar passivated NPN power switching transistor featuring an integrated anti-parallel emitter-collector diode. It is designed for applications requiring fast switching, high DC current gain, and high voltage capability, such as compact fluorescent lamps (CFL), low power electronic lighting ballasts, and off-line self-oscillating power supplies (SOPS) for battery charging.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Description | ||||||
| IC | Collector current (DC) | - | - | - | 1.5 | A |
| Ptot | Total power dissipation | Tlead 25 C; see Figure 1 | - | - | 2.1 | W |
| VCESM | Collector-emitter peak voltage | VBE = 0 V | - | - | 700 | V |
| Static Characteristics | ||||||
| hFE | DC current gain | IC = 0.5 A; VCE = 2 V; Tj = 25 C | 8 | 17 | 25 | - |
| ICES | Collector-emitter cut-off current | VBE = 0 V; VCE = 700 V | - | - | 1 | mA |
| ICEO | Collector-emitter cut-off current | VBE = 0 V; VCE = 700 V; Tj = 100 C | - | - | 5 | mA |
| VCEOsus | Collector-emitter sustaining voltage | IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 C; see Figure 3; see Figure 4 | 400 | - | - | V |
| VCEsat | Collector-emitter saturation voltage | IC = 0.5 A; IB = 0.1 A; Tlead = 25 C | - | - | 0.5 | V |
| VBEsat | Base-emitter saturation voltage | IC = 0.5 A; IB = 0.1 A; Tlead = 25 C | - | - | 1 | V |
| VF | Forward voltage | IF = 0.5 A; Tj = 25 C | - | - | 1.5 | V |
| Dynamic Characteristics | ||||||
| ton | Turn-on time | IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 ; Tlead = 25 C; resistive load; see Figure 5; see Figure 6 | - | - | 1 | s |
| ts | Storage time | IC = 1 A; IBon = 0.2 A; VBB = -5 V; LB = 1 H; Tlead = 25 C; inductive load; see Figure 7; see Figure 8 | - | 0.8 | - | s |
| tf | Fall time | IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A; RL = 75 ; Tlead = 25 C; resistive load; see Figure 5; see Figure 6 | - | - | 0.7 | s |
| Thermal Characteristics | ||||||
| Rth(j-lead) | Thermal resistance from junction to lead | see Figure 2 | - | - | 60 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air; printed-circuit board mounted; lead length = 4 mm | - | 150 | - | K/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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