Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50nA |
| DC Current Gain | 100@50mA,1V |
| Transition frequency(fT) | 120MHz |
| Vce Saturation(VCE(sat)) | 500mV@500mA,20mA |
| type | PNP |
| Pd - Power Dissipation | 625mW |
| Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 30V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 30V 1500mA 120MHz 625mW Surface Mount SOT-23 |
| Mfr. Part # | SEBT8050 |
| Package | SOT-23 |
| Model Number | SEBT8050 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 50nA |
| DC Current Gain | 100@50mA,1V | Transition frequency(fT) | 120MHz |
| Vce Saturation(VCE(sat)) | 500mV@500mA,20mA | type | PNP |
| Pd - Power Dissipation | 625mW | Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 30V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 30V 1500mA 120MHz 625mW Surface Mount SOT-23 | Mfr. Part # | SEBT8050 |
| Package | SOT-23 | Model Number | SEBT8050 |
The SEB T8050 is an epitaxial planar PNP transistor designed for high current applications. It offers complementary functionality and is suitable for various industrial uses.
| Characteristic | Symbol | Rating (Ta=25) | Unit | Test Condition | MIN | TYP. | MAX |
|---|---|---|---|---|---|---|---|
| Maximum Ratings | |||||||
| Collector-Base Voltage | VCBO | 35 | V | ||||
| Collector-Emitter Voltage | VCEO | 30 | V | ||||
| Emitter-Base Voltage | VEBO | 5 | V | ||||
| Collector Current | IC | mA | |||||
| Emitter Current | IE | -800 | mA | ||||
| Collector Power Dissipation | PC | 625 | mW | ||||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature Range | Tstg | -55 +150 | |||||
| Electrical Characteristics | |||||||
| Collector Cut-off Current | ICBO | nA | VCB=15v | 50 | |||
| Collector-Base Breakdown Voltage | VBRCBO | -35 | V | IC=0.5mA | |||
| Collector-Emitter Breakdown Voltage | VBRCEO | -30 | V | IC=1mA | |||
| DC Current Gain | hFE(1) | VCE=1v, IC=50mA | 100 | 300 | |||
| hFE(2) | VCE=1v, IC=350mA | 60 | |||||
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC=500mA, IB=20mA | 0.5 | |||
| Base-Emitter Voltage | VBE | V | VCE=1v, IC=500mA | 1.2 | |||
| Transition Frequency | fr | MHz | VCE=5v, IC=10mA | 120 | |||
| Collector Output Capacitance | Cob | pF | VCB=10V, f=1MHz | 13 | |||
Note: hFE(1) Classification: C :100~200, D : 150~300
Contact Information:
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China
Phone: +86-21-33932402 33932403 33932405 33933508 33933608
Fax: +86-21-33932401
Email: szrxw002@126.com
Website: http://www.sino-ic.net
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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