Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 20uA |
| DC Current Gain | 100@500mA,1V |
| Transition frequency(fT) | - |
| Number | 1 PNP |
| Vce Saturation(VCE(sat)) | 210mV |
| type | PNP |
| Pd - Power Dissipation | 1.2W |
| Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 30V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 30V 3A 1.2W Surface Mount SOT-23-6L |
| Mfr. Part # | SEBT818BA |
| Package | SOT-23-6L |
| Model Number | SEBT818BA |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 20uA |
| DC Current Gain | 100@500mA,1V | Transition frequency(fT) | - |
| Number | 1 PNP | Vce Saturation(VCE(sat)) | 210mV |
| type | PNP | Pd - Power Dissipation | 1.2W |
| Current - Collector(Ic) | 3A | Collector - Emitter Voltage VCEO | 30V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor PNP 30V 3A 1.2W Surface Mount SOT-23-6L |
| Mfr. Part # | SEBT818BA | Package | SOT-23-6L |
| Model Number | SEBT818BA |
The SEBT818BA is a high-gain, low-voltage PNP planar power transistor manufactured by Shanghai Sino-IC Microelectronics Co., Ltd. Utilizing a "Base Island" layout, this transistor offers exceptional high gain performance combined with a very low saturation voltage. It is designed for power management in portable equipment and switching regulators in battery charger applications.
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Collector-Base Voltage (IE = 0) | VCBO | -30 | V | |||
| Collector-Emitter Voltage (IB = 0) | VCEO | -30 | V | |||
| Emitter-Base Voltage (IC = 0) | VEBO | -5 | V | |||
| Collector Current | IC | -3 | A | |||
| Collector Peak Current | ICM | -6 | A | |||
| Base Current | IB | -0.2 | A | |||
| Base Peak Current | IBM | -0.5 | A | |||
| Total Dissipation at TC = 25 C | Ptot | 1.2 | W | |||
| Storage Temperature | Tstg | -65 | 150 | C | ||
| Max. Operating Junction Temperature | Tj | 150 | C | |||
| Thermal Data | ||||||
| Thermal Resistance Junction-ambient | Rthj-amb (1) | 104.2 | C/W | |||
| Electrical Characteristics | ||||||
| Collector Cut-off Current (IE = 0) | ICBO | VCB = -30 V | -0.1 | A | ||
| Collector Cut-off Current (IE = 0) | ICBO | VCB = -30 V, TC = 125 C | -20 | A | ||
| Emitter Cut-off Current (IC = 0) | IEBO | VEB = -5 V | -0.1 | A | ||
| Collector-Emitter Breakdown Voltage (IB = 0) | V(BR)CEO* | IC = -10 mA | -30 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat)* | IC = -0.5 A, IB = -5 mA | -0.075 | -0.21 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat)* | IC = -2 A, IB = -20 mA | -0.15 | -0.5 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat)* | IC = -1.2 A, IB = -20 mA | -0.25 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat)* | IC = -0.5 A, IB = -5 mA | -0.74 | -1.1 | V | |
| Base-Emitter Saturation Voltage | VBE(sat)* | IC = -1.2 A, IB = -20 mA | -1.1 | -1.2 | V | |
| Base-Emitter Saturation Voltage | VBE(sat)* | IC = -2 A, IB = -20 mA | -1.2 | V | ||
| Base-Emitter Voltage | VBE(ON)* | IC = -0.5 A, VCE = -2 V | -0.71 | -1.1 | V | |
| DC Current Gain | hFE* | IC = -0.5 A, VCE = -1 V | 100 | |||
| DC Current Gain | hFE* | IC = -2.5 A, VCE = -3 V | 100 | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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