Hefei Purple Horn E-Commerce Co., Ltd.
| Current - Collector Cutoff | 1mA |
| DC Current Gain | 10@400mA,5V |
| Transition frequency(fT) | - |
| Vce Saturation(VCE(sat)) | 400mV |
| type | NPN |
| Pd - Power Dissipation | 2.1W |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 400V |
| Operating Temperature | - |
| Description | 10@400mA,5V NPN 2.1W 1A 400V TO-92-3 Single Bipolar Transistors RoHS |
| Mfr. Part # | BUJ100LR,412 |
| Package | TO-92-3 |
| Model Number | BUJ100LR,412 |
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Product Specification
| Current - Collector Cutoff | 1mA | DC Current Gain | 10@400mA,5V |
| Transition frequency(fT) | - | Vce Saturation(VCE(sat)) | 400mV |
| type | NPN | Pd - Power Dissipation | 2.1W |
| Current - Collector(Ic) | 1A | Collector - Emitter Voltage VCEO | 400V |
| Operating Temperature | - | Description | 10@400mA,5V NPN 2.1W 1A 400V TO-92-3 Single Bipolar Transistors RoHS |
| Mfr. Part # | BUJ100LR,412 | Package | TO-92-3 |
| Model Number | BUJ100LR,412 |
The BUJ100LR is a high voltage, high speed, planar passivated NPN power switching transistor designed for various electronic applications. It offers fast switching, high voltage capability, and very low switching and conduction losses, making it suitable for compact fluorescent lamps (CFL), electronic lighting ballasts, inverters, and off-line self-oscillating power supplies.
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Peak Voltage (VCESM) | VBE = 0 V | - | - | 700 | V |
| Collector-Base Voltage (VCBO) | IE = 0 A | - | - | 700 | V |
| Collector-Emitter Voltage (VCEO) | IB = 0 A | - | - | 400 | V |
| Emitter-Base Voltage (VEBO) | IC = 0 A; I(Emitter) = 10 mA | - | - | 9 | V |
| Collector Current (IC) | DC; Fig. 1 | - | - | 1 | A |
| Peak Collector Current (ICM) | - | - | - | 2 | A |
| Base Current (IB) | DC | - | - | 0.5 | A |
| Peak Base Current (IBM) | - | - | - | 1 | A |
| Total Power Dissipation (Ptot) | Tlead 25 C; Fig. 2 | - | - | 2.1 | W |
| Storage Temperature (Tstg) | - | -65 | - | 150 | C |
| Junction Temperature (Tj) | - | - | - | 150 | C |
| Thermal Resistance (Rth(j-lead)) | Fig. 3 | - | - | 60 | K/W |
| Thermal Resistance (Rth(j-a)) | Printed circuit board mounted; lead length 4 mm | - | 150 | - | K/W |
| Collector-Emitter Cut-off Current (ICES) | VBE = 0 V; VCE = 700 V; Tj = 125 C | - | - | 5 | mA |
| Emitter-Base Cut-off Current (IEBO) | VEB = 9 V; IC = 0 A; Tlead = 25 C | - | - | 1 | mA |
| Collector-Emitter Sustaining Voltage (VCEOsus) | IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25 C; Fig. 4; Fig. 5 | 400 | - | - | V |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 0.25 A; IB = 50 mA; Tlead = 25 C; Fig. 6 | - | 0.2 | 0.5 | V |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 0.5 A; IB = 125 mA; Tlead = 25 C; Fig. 6 | - | 0.3 | 1 | V |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 0.75 A; IB = 250 mA; Tlead = 25 C; Fig. 6 | - | 0.4 | 1.5 | V |
| Base-Emitter Saturation Voltage (VBEsat) | IC = 0.25 A; IB = 50 mA; Tlead = 25 C; Fig. 7 | - | - | 1 | V |
| Base-Emitter Saturation Voltage (VBEsat) | IC = 0.5 A; IB = 125 mA; Tlead = 25 C; Fig. 7 | - | - | 1.2 | V |
| DC Current Gain (hFE) | IC = 0.5 mA; VCE = 2 V; Tlead = 25 C | 12 | - | - | - |
| DC Current Gain (hFE) | IC = 0.4 A; VCE = 5 V; Tlead = 25 C; Fig. 8; Fig. 9 | - | 10 | 30 | - |
| DC Current Gain (hFE) | IC = 0.8 A; VCE = 5 V; Tlead = 25 C; Fig. 8; Fig. 9 | - | 5 | 20 | - |
| Fall Time (tf) | IC = 1 A; IBon = 200 mA; VBB = -5 V; LB = 1 H; Tlead = 25 C; inductive load; Fig. 10; Fig. 11 | - | 80 | - | ns |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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