| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 500nA |
| Transition frequency(fT) | 50MHz |
| type | NPN |
| Vce Saturation(VCE(sat)) | 500mV@20mA,2mA |
| Pd - Power Dissipation | 350mW |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 300V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 350mW Surface Mount SOT-23 |
| Mfr. Part # | MMBTA42Q |
| Package | SOT-23 |
| Model Number | MMBTA42Q |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 500nA |
| Transition frequency(fT) | 50MHz | type | NPN |
| Vce Saturation(VCE(sat)) | 500mV@20mA,2mA | Pd - Power Dissipation | 350mW |
| Current - Collector(Ic) | 500mA | Collector - Emitter Voltage VCEO | 300V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 350mW Surface Mount SOT-23 |
| Mfr. Part # | MMBTA42Q | Package | SOT-23 |
| Model Number | MMBTA42Q |
The MMBTA42Q is an NPN High Voltage Transistor designed for general-purpose amplification. It features high conductance and high voltage capabilities, housed in a SOT-23 package. The epoxy meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. The 'Q' suffix indicates AEC-Q101 qualification, making it suitable for automotive electronics.
| Item | Symbol | Unit | Conditions | Min | Typ | Max |
| Collector-Base Voltage | VCBO | V | 300 | |||
| Collector-Emitter Voltage | VCEO | V | 300 | |||
| Emitter-Base Voltage | VEBO | V | 5 | |||
| Collector Current - Continuous | IC | mA | 500 | |||
| Total Device Dissipation | PD | mW | Ta=25 | 350 | ||
| Junction Temperature | Tj | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Collector-base breakdown voltage | VCBO | V | IC= 100uA, IE=0 | 300 | ||
| Collector-emitter breakdown voltage | VCEO | V | IC= 1mA, IB=0 | 300 | ||
| Emitter-base breakdown voltage | VEBO | V | IE= 100uA, IC=0 | 5 | ||
| Collector-base cut-off current | ICBO | uA | VCB=200V, IE =0 | 0.5 | ||
| Emitter-base cut-off current | IEBO | uA | VEB=5 V, IC=0 | 0.5 | ||
| DC current gain | hFE | VCE= 10V, IC= 1mA | 25 | |||
| DC current gain | hFE | VCE= 10V, IC=10mA | 40 | 300 | ||
| DC current gain | hFE | VCE=10V, IC=30mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=20mA, IB= 2mA | 0.5 | ||
| Base-emitter saturation voltage | VBE(sat) | V | IC=20mA, IB= 2mA | 1.0 | ||
| Transition frequency | fT | MHz | VCE=20V,IC=10mA,f=30MHz | 50 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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