| Emitter-Base Voltage(Vebo) | 4V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 225mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 225mW Surface Mount SOT-323 |
| Mfr. Part # | MMBTA06W_R1_00001 |
| Package | SOT-323 |
| Model Number | MMBTA06W_R1_00001 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 4V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 225mW | Transition frequency(fT) | 100MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 500mA | Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 225mW Surface Mount SOT-323 |
| Mfr. Part # | MMBTA06W_R1_00001 | Package | SOT-323 |
| Model Number | MMBTA06W_R1_00001 |
The PMMBTA06W is an NPN silicon planar high voltage transistor designed for various electronic applications. It offers a collector current of up to 500mA and a maximum power dissipation of 225mW. This device is lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free).
| Parameter | Symbol | Test Condition | Limit | Units |
|---|---|---|---|---|
| Maximum Ratings and Thermal Characteristics | ||||
| Collector-Emitter Voltage | VCBO | 80 | V | |
| Collector-Base Voltage | VCEO | 80 | V | |
| Emitter-Base Voltage | VEBO | 4 | V | |
| Collector Current-Continuous | IC | 500 | mA | |
| Maximum Power Dissipation (Note 1) | PD | 225 | mW | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to +150 | C | |
| Typical Junction-to Ambient Thermal Resistance (Note 1) | RJA | 550 | C/W | |
| Electrical Characteristics | ||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= 1mA, IB= 0 | 80 | V |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC= 100A, IE= 0 | 80 | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE= 100A, IC= 0 | 4 | V |
| Collector Cutoff Current | ICBO | VCB= 80V, IE= 0 | 100 | nA |
| Collector Cutoff Current | ICES | VCE= 60V, IB= 0 | 100 | nA |
| DC Current Gain | hFE | VCE= 1V, IC= 10mA | 100 | - |
| DC Current Gain | hFE | VCE= 1V, IC= 100mA | 100 | - |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=100mA, IB= 10mA | 0.25 | V |
| Base-Emitter Turn-on voltage | VBE(on) | IC=100mA, VCE= 1V | 1.2 | V |
| Current-Gain-Bandwidth Product | fT | IC=10mA, VCE= 2V, f=100MHz | 100 | MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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