| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 330mW |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 330mW Surface Mount SOT-323-3 |
| Mfr. Part # | BC817-25_R1_00001 |
| Package | SOT-323-3 |
| Model Number | BC817-25_R1_00001 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 330mW | Transition frequency(fT) | 100MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 500mA | Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -55℃~+150℃@(Tj) | Description | Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 330mW Surface Mount SOT-323-3 |
| Mfr. Part # | BC817-25_R1_00001 | Package | SOT-323-3 |
| Model Number | BC817-25_R1_00001 |
The BC817 series are NPN epitaxial silicon planar design general purpose transistors suitable for amplifier applications. They are lead-free in compliance with EU RoHS 2011/65/EU directive and feature a green molding compound as per IEC61249 Std. (Halogen Free).
| Parameter | Symbol | BC817-16 | BC817-25 | BC817-40 | Unit | |
| MAXIMUM RATINGS | ||||||
| Collector-Emitter Voltage | VCEO | 45 | V | |||
| Collector-Base Voltage | VCBO | 50 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current - Continuous | IC | 500 | mA | |||
| Peak Collector Current | ICM | 1000 | mA | |||
| Total Power Dissipation (NOTE) | PTOT | 330 | mW | |||
| Junction and Storage Temperature Range | TJ , TSTG | -55 to +150 | °C | |||
| Thermal Resistance Junction to Ambient (NOTE) | RθJA | 375 | °C / W | |||
| Thermal Resistance Junction to Lead | RθJL | 220 | °C / W | |||
| ELECTRICAL CHARACTERISTICS ( TJ=25°C, unless otherwise noted ) | ||||||
| Collector-Emitter Breakdown Voltage ( Ic=10mA, IB=0 ) | V(BR)CEO | 45 | V | |||
| Collector-Base Breakdown Voltage ( VEB=0V, Ic=10μA ) | V(BR)CBO | 50 | V | |||
| Emitter-Base Breakdown Voltage ( IE=1μA, Ic=0 ) | V(BR)EBO | 5 | V | |||
| Emitter-Base Cutoff Current ( VEB =5V ) | IEBO | 100 | nA | |||
| Collector-Base Cutoff Current ( VCB=20V, IE=0 ) | ICBO | TJ =25°C | - | - | 5 | nA |
| TJ =150°C | - | - | 100 | μA | ||
| DC Current Gain ( Ic=100mA, VCE=1V ) | hFE | 100 | - | - | - | |
| - | 160 | - | - | |||
| - | - | 250 | - | |||
| DC Current Gain ( Ic=500mA, VCE=1V ) | hFE | 250 | - | - | - | |
| - | 400 | - | - | |||
| - | - | 600 | - | |||
| Collector-Emitter Saturation Voltage ( Ic=500mA, IB=50mA ) | VCE(SAT) | 0.7 | V | |||
| Base-Emitter Voltage ( Ic=500mA, VCE=1V ) | VBE(ON) | 1.2 | V | |||
| Collector-Base Capacitance (VCB=10V, IE=0, f=1MHz) | CCBO | 7 | - | - | pF | |
| Current Gain-Bandwidth Product ( Ic=10mA, VCE=5V, f=100MHz ) | fT | 100 | - | - | MHz | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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