Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 225mW |
| Transition frequency(fT) | 250MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 40V 600mA 225mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT4401-AU_R1_000A1 |
| Package | SOT-23 |
| Model Number | MMBT4401-AU_R1_000A1 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 225mW | Transition frequency(fT) | 250MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 600mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃@(Tj) | Description | Bipolar (BJT) Transistor NPN 40V 600mA 225mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT4401-AU_R1_000A1 | Package | SOT-23 |
| Model Number | MMBT4401-AU_R1_000A1 |
The MMBT4401-AU is an NPN epitaxial silicon planar design general purpose switching transistor. It features a collector-emitter voltage of 40V and a continuous collector current of 600mA. This device is AEC-Q101 qualified, lead-free in compliance with EU RoHS 2.0, and manufactured with a green molding compound as per IEC 61249 standard. It is housed in a SOT-23 plastic package.
| Parameter | Symbol | Value | Units | Condition |
| Collector - Emitter Voltage | VCEO | 40 | V | |
| Collector - Base Voltage | VCBO | 60 | V | |
| Emitter - Base Voltage | VEBO | 6 | V | |
| Collector Current - Continuous | IC | 600 | mA | |
| Max. Power Dissipation | PTOT | 225 | mW | Note 1 |
| Thermal Resistance, Junction to Ambient | RJA | 556 | C/W | |
| Junction Temperature Range | TJ | -55 to 150 | C | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Collector - Emitter Breakdown Voltage | V(BR)CEO | 40 | V | IC = -10mA, IB = 0 |
| Collector - Base Breakdown Voltage | V(BR)CBO | 60 | V | IE = -100A, IC = 0 |
| Emitter - Base Breakdown Voltage | V(BR)EBO | 6 | V | IC = -100A, VCE = 0 |
| Collector Cut-off Current | ICEX | 0.1 | A | VCE = 40V, VBE = -4.0V |
| Base Cut-off Current | IBL | 0.1 | A | VCE = 40V, VBE = -4.0V |
| DC Current Gain | hFE | 40 to 300 | IC = 150mA, VCE = 10V | |
| DC Current Gain | hFE | 100 to 300 | IC = 10mA, VCE = 10V | |
| DC Current Gain | hFE | 50 to 150 | IC = 1mA, VCE = 10V | |
| DC Current Gain | hFE | 20 to 50 | IC = 0.1mA, VCE = 10V | |
| Collector - Emitter Saturation Voltage | VCE(SAT) | 0.4 | V | IC = 500mA, IB = 50mA |
| Collector - Emitter Saturation Voltage | VCE(SAT) | 0.2 | V | IC = 150mA, IB = 15mA |
| Base - Emitter Saturation Voltage | VBE(SAT) | 1.1 | V | IC = 500mA, IB = 50mA |
| Base - Emitter Saturation Voltage | VBE(SAT) | 0.9 | V | IC = 150mA, IB = 15mA |
| Collector - Base Capacitance | Cobo | 5.6 | pF | VCB = 10V, f = 1MHz |
| Emitter - Base Capacitance | Cebo | 30 | pF | VEB = 5.0V, f = 1MHz |
| Transition Frequency | fT | 200 | MHz | VCE = 10V, IC = 100mA |
| Delay Time | td | 5 | ns | VCC = 30V, IB1 = 3mA, IC = 150mA |
| Rise Time | tr | 2 | ns | VCC = 30V, IB1 = 3mA, IC = 150mA |
| Storage Time | ts | 2 | ns | VCC = 30V, IB1 = 3mA, IB2 = -15mA, IC = 150mA |
| Fall Time | tf | 3 | ns | VCC = 30V, IB1 = 3mA, IB2 = -15mA, IC = 150mA |
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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