| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 1.4W |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 100V 1A 100MHz 1.4W Surface Mount SOT-89 |
| Mfr. Part # | BCX56-16-AU_000A1 |
| Package | SOT-89 |
| Model Number | BCX56-16-AU_000A1 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 1.4W | Transition frequency(fT) | 100MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 1A | Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 100V 1A 100MHz 1.4W Surface Mount SOT-89 |
| Mfr. Part # | BCX56-16-AU_000A1 | Package | SOT-89 |
| Model Number | BCX56-16-AU_000A1 |
The PBCX56-16-AU is a Silicon NPN epitaxial type transistor designed for low Vce(sat) applications. It offers a high collector current capability, excellent DC current gain characteristics, and is AEC-Q101 qualified. This transistor is lead-free, complies with EU RoHS 2.0, and uses a green molding compound. Its PNP complement is the BCX53-16-AU.
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Maximum Ratings and Thermal Characteristics | ||||||
| Collector-Base Voltage | VCBO | 120 | V | |||
| Collector-Emitter Voltage | VCEO | 100 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current (DC) | IC | 1 | A | |||
| Collector Current (Pulse) | ICP | 3 | A | |||
| Power Dissipation | PD | (TA=25 oC) | 1.4 | W | ||
| Junction Temperature | TJ | 150 | o | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | ~ | 150 | o | |
| Thermal Resistance from Junction to Ambient (Note) | RJA | (TA=25 oC) | 89 | oC/W | ||
| Electrical Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | BVCEO | IC= 10mA, IB= 0A | 100 | - | - | V |
| Collector-Base Breakdown Voltage | BVCBO | IC= 0.1mA, IE= 0A | 120 | - | - | V |
| Emitter-Base Breakdown Voltage | BVEBO | IE= 0.1mA, IC= 0A | 6 | - | - | V |
| Collector Cutoff Current | ICBO | VCB= 80V, IE= 0A | - | - | 100 | nA |
| Emitter Cutoff Current | IEBO | VEB= 6V, IC= 0A | - | - | 100 | nA |
| DC Current Gain (Note1) | hFE | VCE= 2V, IC= 5mA | 100 | - | - | |
| VCE= 2V, IC= 150mA | 100 | 250 | - | |||
| VCE= 2V, IC= 500mA | 40 | - | - | |||
| Collector-Emitter Saturation Voltage (Note1) | VCE(SAT) | IC= 0.1A, IB= 10mA | - | 60 | 120 | mV |
| IC= 0.5A, IB= 50mA | - | 150 | 350 | |||
| IC= 1A, IB= 0.1A | - | 250 | 500 | |||
| Base-Emitter Saturation voltage (Note1) | VBE(SAT) | IC= 0.1A, IB= 10mA | - | - | 1.0 | V |
| IC= 0.5A, IB= 50mA | - | - | 1.1 | |||
| Transition Frequency | fT | VCE= 5V, IE= -50mA | 100 | - | - | MHz |
| Collector Output Capacitance | COB | VCB= 10V, IE= 0A, f=1MHz | - | - | 10 | pF |
Note: 1. Pulse width<300us, Duty cycle<2%
Note: Mounted on FR4 PCB at 1 inch square copper pad.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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