Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 225mW |
| Transition frequency(fT) | 250MHz |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 225mW Surface Mount SOT-363 |
| Mfr. Part # | MMDT4401_R1_00001 |
| Package | SOT-363 |
| Model Number | MMDT4401_R1_00001 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 225mW | Transition frequency(fT) | 250MHz |
| type | NPN | Number | 2 NPN |
| Current - Collector(Ic) | 600mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃@(Tj) | Description | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 225mW Surface Mount SOT-363 |
| Mfr. Part # | MMDT4401_R1_00001 | Package | SOT-363 |
| Model Number | MMDT4401_R1_00001 |
The MMDT4401 is an NPN epitaxial silicon, planar design general purpose switching transistor. It offers a collector-emitter voltage of 40V and a continuous collector current of 600mA, with a power dissipation of 225mW. This device is lead-free and compliant with EU RoHS 2011/65/EU directive, and features a green molding compound as per IEC61249 Std. (Halogen Free). It is supplied in a SOT-363 plastic package.
| Parameter | Symbol | Value | Units | Test Condition |
| Collector - Emitter Voltage | VCEO | 40 | V | |
| Collector - Base Voltage | VCBO | 60 | V | |
| Emitter - Base Voltage | VEBO | 6.0 | V | |
| Collector Current - Continuous | IC | 600 | mA | |
| Max Power Dissipation | PTOT | 225 | mW | (Note1) Transistor mounted on FR-4 board 1.0X0.85X0.062 in. |
| Collector - Emitter Breakdown Voltage | V (BR)CEO | 40 | V | IC=1.0mA, IB=0 |
| Collector - Base Breakdown Voltage | V (BR)CBO | 60 | V | IC=100uA, IE=0 |
| Emitter - Base Breakdown Voltage | V (BR)EBO | 6.0 | V | IE=100uA, IC=0 |
| Base Cutoff Current | IBL | 100 | nA | VCE=35V, VEB=0.4V |
| Collector Cutoff Current | ICEX | 100 | nA | VCE=35V, VEB=0.4V |
| DC Current Gain | hFE | 20-300 | IC=0.1mA, VCE=1.0V to IC=500mA, VCE=2.0V | |
| Collector - Emitter Saturation Voltage | V CE(SAT) | 0.40 - 0.75 | V | IC=150mA, IB=15mA to IC=500mA, IB=50mA |
| Base - Emitter Saturation Voltage | V BE(SAT) | 0.75 - 1.20 | V | IC=150mA, IB=15mA to IC=500mA, IB=50mA |
| Collector - Base Capacitance | C CBO | 6.5 | pF | VCB=5V, IE=0, f=1MHz |
| Emitter - Base Capacitance | C EBO | 30 | pF | VCB=0.5V, IC=0, f=1MHz |
| Current Gain - Bandwidth Product | F T | 250 | MHz | VCE=10V, IC=20mA, f=100MHz |
| Delay Time | td | 15 | ns | VCC=30V,VBE=2.0V, IC=150mA,IB1=15mA |
| Rise Time | tr | 20 | ns | VCC=30V,VBE=2.0V, IC=150mA,IB1=15mA |
| Storage Time | ts | 225 | ns | VCC=30V,IC=150mA IB1=IB2=15mA |
| Fall Time | tf | 30 | ns | VCC=30V,IC=150mA IB1=IB2=15mA |
| Junction Temperature | TJ | -55 to 150 | C | |
| Storage Temperature | TSTG | -55 to 150 | C | |
| Thermal Resistance, Junction to Ambient | RJA | 625 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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