Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 1.4W |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 100V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 100V 1A 100MHz 1.4W Surface Mount SOT-89 |
| Mfr. Part # | BCX56-16-AU_R1_000A1 |
| Package | SOT-89 |
| Model Number | BCX56-16-AU_R1_000A1 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 1.4W | Transition frequency(fT) | 100MHz |
| type | NPN | Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 100V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 100V 1A 100MHz 1.4W Surface Mount SOT-89 | Mfr. Part # | BCX56-16-AU_R1_000A1 |
| Package | SOT-89 | Model Number | BCX56-16-AU_R1_000A1 |
The BCX56-16-AU is a silicon NPN epitaxial transistor designed for applications requiring low collector-emitter saturation voltage (Vce(sat)). It offers high collector current capability, excellent DC current gain, and is AEC-Q101 qualified, making it suitable for demanding automotive and industrial applications. This device is lead-free and compliant with EU RoHS 2.0, utilizing a green molding compound.
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Maximum Ratings and Thermal Characteristics | ||||||
| Collector-Base Voltage | VCBO | 120 | V | |||
| Collector-Emitter Voltage | VCEO | 100 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current (DC) | IC | 1 | A | |||
| Collector Current (Pulse) | ICP | 3 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | ~ | 150 | °C | |
| Thermal Resistance from Junction to Ambient | RΘJA | (Note) | 89 | °C/W | ||
| Electrical Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | BVCEO | IC= 10mA, IB= 0A | 100 | - | - | V |
| Collector-Base Breakdown Voltage | BVCBO | IC= 0.1mA, IE= 0A | 120 | - | - | V |
| Emitter-Base Breakdown Voltage | BVEBO | IE= 0.1mA, IC= 0A | 6 | - | - | V |
| Collector Cutoff Current | ICBO | VCB= 80V, IE= 0A | - | - | 100 | nA |
| Emitter Cutoff Current | IEBO | VEB= 6V, IC= 0A | - | - | 100 | nA |
| DC Current Gain | hFE | VCE= 2V, IC= 5mA | 100 | - | - | |
| DC Current Gain | hFE | VCE= 2V, IC= 150mA | 100 | - | 250 | |
| DC Current Gain | hFE | VCE= 2V, IC= 500mA | 40 | - | - | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC= 0.1A, IB= 10mA | - | 60 | 120 | mV |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC= 0.5A, IB= 50mA | - | 150 | 350 | mV |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC= 1A, IB= 0.1A | - | 250 | 500 | mV |
| Base-Emitter Saturation voltage | VBE(SAT) | IC= 0.1A, IB= 10mA | - | - | 1.0 | V |
| Base-Emitter Saturation voltage | VBE(SAT) | IC= 0.5A, IB= 50mA | - | - | 1.1 | V |
| Transition Frequency | fT | VCE= 5V, IE= -50mA | 100 | - | - | MHz |
| Collector Output Capacitance | COB | VCB= 10V, IE= 0A, f=1MHz | - | - | 10 | pF |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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