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Hefei Purple Horn E-Commerce Co., Ltd.

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China PANJIT MMBTA56 R1 00001 High Voltage Silicon Planar Transistors with 225mW
China PANJIT MMBTA56 R1 00001 High Voltage Silicon Planar Transistors with 225mW

  1. China PANJIT MMBTA56 R1 00001 High Voltage Silicon Planar Transistors with 225mW

PANJIT MMBTA56 R1 00001 High Voltage Silicon Planar Transistors with 225mW

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Emitter-Base Voltage(Vebo) 4V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 225mW
Transition frequency(fT) 100MHz
type PNP
Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 80V
Operating Temperature -55℃~+150℃@(Tj)
Description Bipolar (BJT) Transistor PNP 80V 500mA 100MHz 225mW Surface Mount SOT-23
Mfr. Part # MMBTA56_R1_00001
Package SOT-23
Model Number MMBTA56_R1_00001

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 4V Current - Collector Cutoff 100nA
Pd - Power Dissipation 225mW Transition frequency(fT) 100MHz
type PNP Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 80V Operating Temperature -55℃~+150℃@(Tj)
Description Bipolar (BJT) Transistor PNP 80V 500mA 100MHz 225mW Surface Mount SOT-23 Mfr. Part # MMBTA56_R1_00001
Package SOT-23 Model Number MMBTA56_R1_00001

NPN and PNP High Voltage Transistors

This series of NPN and PNP silicon planar transistors offers high voltage capabilities with a collector current of 500mA and a power dissipation of 225mW. Designed with lead-free compliance to EU RoHS2.0 directives and utilizing a green molding compound (Halogen Free) as per IEC61249 Std., these transistors are suitable for various electronic applications requiring reliable performance in a compact SOT-23 package.

Product Attributes

  • Brand: Panjit International Inc.
  • Certifications: EU RoHS2.0 (2011/65/EU & 2015/865/EU directive), IEC61249 Std. (Halogen Free)
  • Material: Silicon, Planar Design
  • Package: SOT-23
  • Lead Compliance: Lead free

Technical Specifications

Part Number Marking Collector-Emitter Voltage (VCEO) Collector-Base Voltage (VCB) Emitter-Base Voltage (VEBO) Collector Current-Continuous (IC) Total Device Dissipation (PD) FR-4 board Typical Thermal Resistance (RJA) FR-4 board Total Device Dissipation (PD) Alumina substrate Typical Thermal Resistance (RJA) Alumina substrate Operating/Storage Temperature (TJ, TSTG) Collector-Emitter Breakdown Voltage (V(BR)CEO) Emitter-Base Breakdown Voltage (V(BR)EBO) Collector Cutoff Current (ICES) Collector Cutoff Current (ICBO) DC Current Gain (hFE) (IC=10mA, VCE=1V) DC Current Gain (hFE) (IC=100mA, VCE=1V) Collector-Emitter Saturation Voltage (VCE(SAT)) (IC=100mA, IB=10mA) Base-Emitter On Voltage (VBE(ON)) (IC=100mA, VCE=1V) Current-Gain-Bandwidth Product (fT) (IC=10mA, VCE=2V, f=100MHz) Packing Code Package Type Packing Type
MMBTA05 B05 60V 60V 4V 500mA 225mW (TA=25oC) 556 oC/W 300mW (TA=25oC) 417 oC/W -55 to 150 oC 60V 4V -0.1A -0.1A 100 - -0.25V -1.2V 100MHz R1_00001 / R2_00001 SOT-23 3K / 7" Reel / 12K / 13" Reel
MMBTA06 B06 80V 80V 4V 500mA 225mW (TA=25oC) 556 oC/W 300mW (TA=25oC) 417 oC/W -55 to 150 oC 80V 4V -0.1A -0.1A 100 - -0.25V -1.2V 100MHz - SOT-23 -
MMBTA55 B55 60V 60V 4V 500mA 225mW (TA=25oC) 556 oC/W 300mW (TA=25oC) 417 oC/W -55 to 150 oC 60V 4V -0.1A -0.1A 100 - -0.25V -1.2V 100MHz - SOT-23 -
MMBTA56 B56 80V 80V 4V 500mA 225mW (TA=25oC) 556 oC/W 300mW (TA=25oC) 417 oC/W -55 to 150 oC 80V 4V -0.1A -0.1A 100 - -0.25V -1.2V 100MHz - SOT-23 -

2410121246_PANJIT-MMBTA56-R1-00001_C263320.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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