| Reverse Leakage Current (Ir) | 100nA |
| Non-Repetitive Peak Forward Surge Current | 2A |
| Reverse Recovery Time (trr) | 4ns |
| Diode Configuration | Independent |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Pd - Power Dissipation | 200mW |
| Voltage - Forward(Vf@If) | 1V@100mA |
| Current - Rectified | 100mA |
| Description | Diode Independent 80V 100mA Surface Mount DFN1006-2L |
| Mfr. Part # | 1N4448D1 |
| Package | DFN1006-2L |
| Model Number | 1N4448D1 |
View Detail Information
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Product Specification
| Reverse Leakage Current (Ir) | 100nA | Non-Repetitive Peak Forward Surge Current | 2A |
| Reverse Recovery Time (trr) | 4ns | Diode Configuration | Independent |
| Voltage - DC Reverse (Vr) (Max) | 80V | Pd - Power Dissipation | 200mW |
| Voltage - Forward(Vf@If) | 1V@100mA | Current - Rectified | 100mA |
| Description | Diode Independent 80V 100mA Surface Mount DFN1006-2L | Mfr. Part # | 1N4448D1 |
| Package | DFN1006-2L | Model Number | 1N4448D1 |
The 1N4448D1 is a fast switching diode designed for high-speed applications. It features low reverse leakage current and is ROHS compliant with UL-94 V-0 / Green EMC certification. The device has a matte tin lead finish (Pb-Free).
| Symbol | Parameter | Conditions | Value | Units |
|---|---|---|---|---|
| VRSM | Non-Repetitive Peak Reverse Voltage | 100 | V | |
| VRRM | Peak Repetitive Reverse Voltage | 80 | V | |
| VRWM | Working Peak Reverse Voltage | 80 | V | |
| VR | DC Blocking Voltage | 80 | V | |
| IFRM | Repetitive Peak Forward Current | 300 | mA | |
| IO | Average Forward Current | 100 | mA | |
| IFSM | Non-Repetitive Peak Forward Current *1 | Pulse width = 1s | 2 | A |
| PD | Power Dissipation | 200 | mW | |
| TJ | Junction Temperature | 150 | ||
| TSTG | Storage Temperature | -55 to +150 | ||
| VR | Reverse Voltage | IR=100uA | 80 | V |
| VF | Forward Voltage | IF=5mA | 0.62 - 0.72 | V |
| VF | Forward Voltage | IF=10mA | 0.855 | V |
| VF | Forward Voltage | IF=100mA | 1.0 | V |
| VF | Forward Voltage | IF=150mA | 1.25 | V |
| IR | Reverse Leakage Current | VR=80V | 100 | nA |
| IR | Reverse Leakage Current | VR=20V | 2 | nA |
| C | Capacitance | VR = 0.5V, f = 1MHz | 3 | pF |
| TRR | Reverse Recovery Time | IF = IR =10mA, IRR = 1mA, RL = 100 | 4 | ns |
| Device | Package | Shipping | Tape wide | Emboss pitch | Tape specification | Notes | |
|---|---|---|---|---|---|---|---|
| 1N4448D1 | DFN1006-2L | Tape & Reel | 10000pcs /7 Reel | 8mm | 4mm |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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