| Non-Repetitive Peak Forward Surge Current | 4A |
| Reverse Leakage Current (Ir) | 1uA@75V |
| Reverse Recovery Time (trr) | 4ns |
| Diode Configuration | 2 Independent |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Pd - Power Dissipation | 250mW |
| Voltage - Forward(Vf@If) | 1.25V@150mA |
| Current - Rectified | 250mA |
| Description | Diode 2 Independent 100V 250mA Surface Mount SOD-323F |
| Mfr. Part # | BAS316M3 |
| Package | SOD-323F |
| Model Number | BAS316M3 |
View Detail Information
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Product Specification
| Non-Repetitive Peak Forward Surge Current | 4A | Reverse Leakage Current (Ir) | 1uA@75V |
| Reverse Recovery Time (trr) | 4ns | Diode Configuration | 2 Independent |
| Voltage - DC Reverse (Vr) (Max) | 100V | Pd - Power Dissipation | 250mW |
| Voltage - Forward(Vf@If) | 1.25V@150mA | Current - Rectified | 250mA |
| Description | Diode 2 Independent 100V 250mA Surface Mount SOD-323F | Mfr. Part # | BAS316M3 |
| Package | SOD-323F | Model Number | BAS316M3 |
The BAS316M3 is a general-purpose, fast switching diode designed for various electronic applications. It features a compact SOD323F Micro SMD package and is RoHS compliant and Green EMC certified. The device offers reliable performance with matte tin lead finishing.
| Symbol | Parameter | Test Conditions | Min | Max | Units |
|---|---|---|---|---|---|
| VRRM | Repetitive Peak Reverse Voltage | 100 | V | ||
| IF(AV) | Forward Current | 250 | mA | ||
| IFRM | Non-Repetitive Peak Forward Surge Current | Pulse Width=1us | 4.0 | A | |
| IFRM | Non-Repetitive Peak Forward Surge Current | Pulse Width=1ms | 1.0 | A | |
| PD | Power Dissipation | 250 | mW | ||
| TJ | Junction Temperature | 150 | |||
| TSTG | Storage Temperature | -65 | to 150 | ||
| VF | Forward Voltage | IF=1.0mA | 0.715 | V | |
| VF | Forward Voltage | IF=10mA | 0.855 | V | |
| VF | Forward Voltage | IF=50mA | 1.000 | V | |
| VF | Forward Voltage | IF=150mA | 1.250 | V | |
| IR | Reverse Current | VR=20V | 0.03 | uA | |
| IR | Reverse Current | VR=75V | 1.00 | uA | |
| VR | Reverse Voltage | IR =100A | 100 | V | |
| CJ | Junction Capacitance | 1MHz, VR =0V | 1.5 | pF | |
| trr | Reverse Recovery Time | IF =10mA, IR =10mA, Irr =0.1x IR | 4.0 | ns |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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