| Reverse Leakage Current (Ir) | 5uA |
| Non-Repetitive Peak Forward Surge Current | 30A |
| Reverse Recovery Time (trr) | 25ns |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Diode Configuration | Independent |
| Voltage - Forward(Vf@If) | 900mV@1A |
| Current - Rectified | 1A |
| Description | 30A 25ns 200V Independent 900mV@1A 1A SMB Single Diodes RoHS |
| Mfr. Part # | MUR120SB |
| Package | SMB |
| Model Number | MUR120SB |
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Product Specification
| Reverse Leakage Current (Ir) | 5uA | Non-Repetitive Peak Forward Surge Current | 30A |
| Reverse Recovery Time (trr) | 25ns | Operating Junction Temperature Range | -55℃~+150℃ |
| Voltage - DC Reverse (Vr) (Max) | 200V | Diode Configuration | Independent |
| Voltage - Forward(Vf@If) | 900mV@1A | Current - Rectified | 1A |
| Description | 30A 25ns 200V Independent 900mV@1A 1A SMB Single Diodes RoHS | Mfr. Part # | MUR120SB |
| Package | SMB | Model Number | MUR120SB |
The MUR120SB is an ultra-fast recovery rectifier diode designed for high-efficiency rectification and freewheeling applications in switching mode converters and inverters. It features low power loss, ultra-fast recovery time, glass passivated chip junction, low leakage current, and high forward surge capability. This product meets MSL level 1 standards and is suitable for consumer, computer, and telecommunication equipment.
| Parameter | Symbol | Unit | Condition | MUR120SB |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | V | Ta=25 | 200 |
| Average Forward Current | IF(AV) | A | Ta=25 | 1.0 |
| Surge(Non-repetitive)Forward Current | IFSM | A | 8.3ms Single Half Sine Wave JEDEC Method | 30 |
| Peak Forward Voltage | VFM | V | IF=1.0A | 0.9 |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta=25 | 5.0 |
| Peak Reverse Current | IRRM2 | A | Ta=125 | 300 |
| Reverse Recovery time | Trr | ns | IF =0.5A, IR =1A, RR =0.25A | 25 |
| Thermal Resistance(Typical) | RJ-L | /W | Between junction and ambient | 20 |
| Typical junction capacitance | Cj | pF | Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C | 25 |
| Non repetitive reverse avalanche energy | ER | mJ | I(BR)R = 0.7 A, inductive load | 10 |
| Storage Temperature | Tstg | 60Hz Half-sine wave,1 cycle, Ta=25 | -55 ~ +150 | |
| Junction Temperature | Tj | 60Hz Half-sine wave,1 cycle, Ta=25 | -55 ~ +150 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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