| Non-Repetitive Peak Forward Surge Current | 2A |
| Reverse Leakage Current (Ir) | 500nA@80V |
| Reverse Recovery Time (trr) | 1.6ns |
| Operating Junction Temperature Range | - |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Diode Configuration | 1 Pair Series Connection |
| Pd - Power Dissipation | 150mW |
| Voltage - Forward(Vf@If) | 900mV@100mA |
| Current - Rectified | 100mA |
| Description | Diode Array 1 Pair Series Connection 80V 100mA Surface Mount SOT-23 |
| Mfr. Part # | KDS226-RTK/P |
| Package | SOT-23 |
| Model Number | KDS226-RTK/P |
View Detail Information
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Product Specification
| Non-Repetitive Peak Forward Surge Current | 2A | Reverse Leakage Current (Ir) | 500nA@80V |
| Reverse Recovery Time (trr) | 1.6ns | Operating Junction Temperature Range | - |
| Voltage - DC Reverse (Vr) (Max) | 80V | Diode Configuration | 1 Pair Series Connection |
| Pd - Power Dissipation | 150mW | Voltage - Forward(Vf@If) | 900mV@100mA |
| Current - Rectified | 100mA | Description | Diode Array 1 Pair Series Connection 80V 100mA Surface Mount SOT-23 |
| Mfr. Part # | KDS226-RTK/P | Package | SOT-23 |
| Model Number | KDS226-RTK/P |
The KDS226 is a silicon epitaxial planar diode designed for ultra-high speed switching applications. It features a small SOT-23 package, low forward voltage (0.9V typ.), fast reverse recovery time (1.6ns typ.), and small total capacitance (0.9pF typ.).
| Characteristic | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Forward Voltage | VF(1) | IF=1mA | - | 0.60 | - | V |
| Forward Voltage | VF(2) | IF=10mA | - | 0.72 | - | V |
| Forward Voltage | VF(3) | IF=100mA | - | 0.90 | 1.20 | V |
| Reverse Current | IR | VR=80V | - | - | 0.5 | A |
| Total Capacitance | CT | VR=0, f=1MHz | - | 0.9 | 3.0 | pF |
| Reverse Recovery Time | trr | IF=10mA | - | 1.6 | 4.0 | nS |
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Maximum (Peak) Reverse Voltage | VRM | 85 | V |
| Reverse Voltage | VR | 80 | V |
| Maximum (Peak) Forward Current | IFM | 300 * | mA |
| Average Forward Current | IO | 100 * | mA |
| Surge Current (10ms) | IFSM | 2 * | A |
| Power Dissipation | PD | 150 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 |
Note: *Unit Rating. Total Rating=Unit Rating x 0.7
| DIM | A | B | C | D | E | G | H | J | K | L | M | N | Q |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MILLIMETERS | 2.93 | 0.20 | 1.30+0.20/-0.15 | 0.40+0.15/-0.05 | 2.40+0.30/-0.20 | 1.90 | 0.95 | 0.13+0.10/-0.05 | 0.00 ~ 0.10 | 0.55 | 0.1 MAX | 0.20 MIN | 1.00+0.20/-0.10 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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