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Hefei Purple Horn E-Commerce Co., Ltd.

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China Ultra high speed switching silicon epitaxial planar diode KEC KDS160-RTK/P with
China Ultra high speed switching silicon epitaxial planar diode KEC KDS160-RTK/P with

  1. China Ultra high speed switching silicon epitaxial planar diode KEC KDS160-RTK/P with

Ultra high speed switching silicon epitaxial planar diode KEC KDS160-RTK/P with

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Non-Repetitive Peak Forward Surge Current 2A
Reverse Leakage Current (Ir) 500nA@80V
Reverse Recovery Time (trr) 1.6ns
Operating Junction Temperature Range -
Voltage - DC Reverse (Vr) (Max) 80V
Diode Configuration -
Pd - Power Dissipation 200mW
Voltage - Forward(Vf@If) 900mV@100mA
Current - Rectified 100mA
Description Diode 80V 100mA USC
Mfr. Part # KDS160-RTK/P
Package USC
Model Number KDS160-RTK/P

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Product Specification

Non-Repetitive Peak Forward Surge Current 2A Reverse Leakage Current (Ir) 500nA@80V
Reverse Recovery Time (trr) 1.6ns Operating Junction Temperature Range -
Voltage - DC Reverse (Vr) (Max) 80V Diode Configuration -
Pd - Power Dissipation 200mW Voltage - Forward(Vf@If) 900mV@100mA
Current - Rectified 100mA Description Diode 80V 100mA USC
Mfr. Part # KDS160-RTK/P Package USC
Model Number KDS160-RTK/P

Product Overview

The KDS160 is a silicon epitaxial planar diode designed for ultra-high speed switching applications. It features a small USC package, low forward voltage, fast reverse recovery time, and small total capacitance, making it suitable for demanding electronic circuits.

Product Attributes

  • Brand: KDS
  • Type: Silicon Epitaxial Planar Diode
  • Application: Ultra High Speed Switching

Technical Specifications

Characteristic Symbol Rating Unit
Maximum (Peak) Reverse Voltage VRM 85 V
Reverse Voltage VR 80 V
Maximum (Peak) Forward Current IFM 300 mA
Average Forward Current IO 100 mA
Surge Current (10ms) IFSM 2 A
Power Dissipation PD * 200 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150

Electrical Characteristics (Ta=25)

Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward Voltage VF(1) IF=1mA - 0.60 - V
Forward Voltage VF(2) IF=10mA - 0.72 - V
Forward Voltage VF(3) IF=100mA - 0.90 1.20 V
Reverse Current IR VR=80V - - 0.5 A
Total Capacitance CT VR=0V, f=1MHz - 0.9 3.0 pF
Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS

* Mounted on a glass epoxy circuit board of 2020mm, pad dimension of 44mm.

Dimensions (USC Package)

Dimension Millimeters
A 2.50 0.2
B 1.25 0.05
C 0.90 0.05
D 1.70 0.05
E 0.126 0.03
F 0 ~ 0.1
G 0.15 0.05
H 0.4 0.1
J 0.30 0.06
K 0.27 0.10
L 4~6
M 1.0 MAX

2410121919_KEC-KDS160-RTK-P_C69757.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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