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{"title":"High Current Schottky Diode ElecSuper B16WS with Plastic Encapsulation and Low","imgUrl":"https:\/\/img.chinax.com\/nimg\/d7\/39\/8e84626959e1882ae282618d7f21-200x200-1\/high_current_schottky_diode_elecsuper_b16ws_with_plastic_encapsulation_and_low.jpg","attrs":{"Reverse Leakage Current (Ir)":"100uA","Diode Configuration":"Independent","Voltage - DC Reverse (Vr) (Max)":"60V","Voltage - Forward(Vf@If)":"700mV"}}
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{"title":"Ultra Fast Recovery Surface Mount Rectifier Diodes US1M-13-F 1 Amp Glass","imgUrl":"https:\/\/img.chinax.com\/nimg\/3c\/ad\/30ac543d33a05bec422f549daa71-200x200-1\/ultra_fast_recovery_surface_mount_rectifier_diodes_us1m_13_f_1_amp_glass_passivated_die_construction.jpg","attrs":{"Reverse Leakage Current (Ir)":"5uA@1kV","Reverse Recovery Time (trr)":"75ns","Operating Junction Temperature Range":"-65\u2103~+150\u2103@(Tj)","Diode Configuration":"-"}}
{"title":"Schottky barrier diode EIC SDB13LHT RoHS compliant suitable for power supplies","imgUrl":"https:\/\/img.chinax.com\/nimg\/41\/c6\/7645a59d1a112b9c971b07b14129-200x200-1\/schottky_barrier_diode_eic_sdb13lht_rohs_compliant_suitable_for_power_supplies_and_loss_applications.jpg","attrs":{"Reverse Leakage Current (Ir)":"250uA@30V","Non-Repetitive Peak Forward Surge Current":"25A","Operating Junction Temperature Range":"-65\u2103~+125\u2103","Voltage - DC Reverse (Vr) (Max)":"30V"}}
The ElecSuper B16WS is a 250mW Plastic-Encapsulated Schottky Barrier Diode featuring high current capability and a low forward voltage drop. This diode is designed for general-purpose applications requiring efficient rectification and low power loss.
Product Attributes
Brand: ElecSuper
Model: B16WS
Package: SOD-323 Small Outline Plastic Package
Polarity: Color band denotes cathode end
Mounting Position: Any
Technical Specifications
Parameter
Symbol
Value
Unit
Test Condition
Maximum repetitive peak reverse voltage
VRRM
60
V
Maximum RMS voltage
VRMS
42
V
Maximum DC blocking voltage
VDC
60
V
Maximum average forward rectified current
IFM
1
A
Peak forward surge current (8.3ms single half sine-wave)
IFSM
10
A
Typical thermal resistance
RJA
400
/W
Power Dissipation
PD
250
mW
Junction temperature
TJ
125
Storage temperature range
TS
-55~150
Valid provided that electrodes are kept at ambient temperature