| Description | TO-247-2 Single Diodes RoHS |
| Mfr. Part # | C6D20065H |
| Package | TO-247-2 |
| Model Number | C6D20065H |
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Product Specification
| Description | TO-247-2 Single Diodes RoHS | Mfr. Part # | C6D20065H |
| Package | TO-247-2 | Model Number | C6D20065H |
This 6th Generation 650 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode offers significant performance advantages over silicon-based solutions, enabling power electronics systems to achieve higher efficiency standards, increased frequencies, and greater power densities. Its SiC construction provides a low forward voltage drop with a positive temperature coefficient, zero reverse recovery current, and temperature-independent switching behavior. Designed for ease of paralleling without thermal runaway concerns, these diodes, combined with reduced cooling requirements and improved thermal performance, contribute to lower overall system costs. Typical applications include industrial power supplies, uninterruptible and auxiliary power supplies, switch mode power supplies, and solar inverters, particularly for boost stages in PFC and DC-DC converters.
| Parameter | Symbol | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | DC Blocking Voltage | |
| Continuous Forward Current | IF | 66 | A | TJ = 25 C | Fig. 3 |
| Continuous Forward Current | IF | 34 | A | TJ = 125 C | |
| Continuous Forward Current | IF | 21 | A | TJ = 150 C | |
| Repetitive Peak Forward Surge Current | IFRM | 79 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | |
| Repetitive Peak Forward Surge Current | IFRM | 45 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | |
| Non-Repetitive Forward Surge Current | IFSM | 132 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | Fig. 8 |
| Non-Repetitive Forward Surge Current | IFSM | 104 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | |
| Non-Repetitive Peak Forward Surge Current | IF,Max | 1550 | A | TC = 25 C, tp = 10 s, Pulse | |
| Non-Repetitive Peak Forward Surge Current | IF,Max | 1290 | A | TC = 110 C, tp = 10 s, Pulse | |
| Power Dissipation | Ptot | 174 | W | TJ = 25 C | Fig. 4 |
| Power Dissipation | Ptot | 76 | W | TJ = 110 C | |
| i2t value | i2dt | 87 | As | TC= 25C, tp=10ms | |
| i2t value | i2dt | 54 | As | TC = 110C, tp=10ms | |
| Forward Voltage | VF | 1.27 | V | IF = 20 A, Tj = 25 C | Fig. 1 |
| Forward Voltage | VF | 1.37 | V | IF = 20 A, Tj = 175 C | |
| Reverse Current | IR | 5 | A | VR = 650 V, Tj = 25 C | Fig. 2 |
| Reverse Current | IR | 40 | A | VR = 650 V, Tj = 175 C | |
| Total Capacitive Charge | QC | 63 | nC | VR = 400 V, Tj = 25 C | Fig. 5 |
| Total Capacitance | C | 1153 | pF | VR = 0 V, Tj = 25 C, f = 1 MHz | Fig. 6 |
| Total Capacitance | C | 120 | pF | VR = 200 V, Tj = 25 C, f = 1 MHz | |
| Total Capacitance | C | 97 | pF | VR = 400 V, Tj = 25 C, f = 1 MHz | |
| Capacitance Stored Energy | Ec | 9.5 | J | VR = 400 V | Fig. 7 |
| Thermal Resistance, Junction to Case (Typical) | R,JC (TYP) | 0.76 | C / W | ||
| Junction Temperature | Tj | -55 to +175 | C | ||
| Case & Storage Temperature | Tc | -55 to +175 | C | ||
| M3 Screw Mounting Torque | 1 | Nm | |||
| 6-32 Screw Mounting Torque | 8.8 | lbf-in |
| Order Number | Packing Type |
|---|---|
| C6D20065H | Tube |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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