Hefei Purple Horn E-Commerce Co., Ltd.
| Description | TO-252 Single Diodes RoHS |
| Mfr. Part # | E4D02120E |
| Package | TO-252 |
| Model Number | E4D02120E |
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Product Specification
| Description | TO-252 Single Diodes RoHS | Mfr. Part # | E4D02120E |
| Package | TO-252 | Model Number | E4D02120E |
The Wolfspeed E4D02120E is a 1200 V, 2 A Silicon Carbide (SiC) Schottky Barrier Diode designed to enhance the performance of power electronics systems. Leveraging SiC technology, it offers higher efficiency, faster switching frequencies, and improved power density compared to silicon-based solutions. These diodes are easily paralleled without concern for thermal runaway, and their reduced cooling requirements and superior thermal performance contribute to lower overall system costs. Key applications include bootstrap diodes, boost diodes in PFC circuits, automotive power conversion, PV inverters, and outdoor power conversion.
| Parameter | Symbol | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | DC Blocking Voltage | |
| Continuous Forward Current | IF | 8 | A | TC = 25 C | Fig. 3 |
| 2 | A | TC = 135 C | |||
| 2 | A | TC = 160 C | |||
| Repetitive Peak Forward Surge Current | IFRM | 11 | A | TC = 25 C, tP = 10 ms, Half Sine Wave | |
| 7 | A | TC = 110 C, tP = 10 ms, Half Sine Wave | |||
| Power Dissipation | Ptot | 50 | W | TC = 25 C | Fig. 4 |
| 21 | W | TC = 110 C | |||
| Forward Voltage | VF | 1.4 | V | IF = 2 A, TJ = 25 C | Fig. 1 |
| 1.8 | V | IF = 2 A, TJ = 25 C | |||
| 1.9 | V | IF = 2 A, TJ = 175 C | |||
| Reverse Current | IR | 10 | A | VR = 1200 V, TJ = 25 C | Fig. 2 |
| 50 | A | VR = 1200 V, TJ = 25 C | |||
| 40 | A | VR = 1200 V, TJ = 175 C | |||
| Total Capacitive Charge | QC | 16 | nC | VR = 800 V, TJ = 25 C | Fig. 5 |
| Total Capacitance | C | 153 | pF | VR = 0 V, TJ = 25 C, f = 1 MHz | Fig. 6 |
| 17 | pF | VR = 400 V, TJ = 25 C, f = 1 MHz | |||
| 14 | pF | VR = 800 V, TJ = 25 C, f = 1 MHz | |||
| Capacitance Stored Energy | EC | 5.6 | J | VR = 800 V | Fig. 7 |
| Thermal Resistance, Junction to Case (Typ.) | R, JC | 2.99 | C/W | ||
| Operating Junction & Storage Temperature | TJ, Tstg | -55 to +175 | C | Fig. 8 | |
| Moisture Sensitivity Level | MSL | 3 | |||
| Electrostatic Discharge (ESD) Human Body Model | HBM | Class 3B ( 8000 V) | |||
| Electrostatic Discharge (ESD) Charge Device Model | CDM | Class C3 ( 1000 V) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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