Hefei Purple Horn E-Commerce Co., Ltd.
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Voltage - Forward(Vf@If) | 1.5V@8A |
| Reverse Leakage Current (Ir) | 20uA@650V |
| Current - Rectified | 28A |
| Description | 650V 1.5V@8A 28A QFN-4(8x8) Single Diodes RoHS |
| Mfr. Part # | C6D08065Q-TR |
| Package | QFN-4(8x8) |
| Model Number | C6D08065Q-TR |
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Product Specification
| Voltage - DC Reverse (Vr) (Max) | 650V | Voltage - Forward(Vf@If) | 1.5V@8A |
| Reverse Leakage Current (Ir) | 20uA@650V | Current - Rectified | 28A |
| Description | 650V 1.5V@8A 28A QFN-4(8x8) Single Diodes RoHS | Mfr. Part # | C6D08065Q-TR |
| Package | QFN-4(8x8) | Model Number | C6D08065Q-TR |
The C6D08065Q is a 6th Generation 650 V, 8 A Silicon Carbide (SiC) Schottky Barrier Diode. Leveraging the performance advantages of SiC, this diode enables power electronics systems to achieve higher efficiency standards, operate at higher frequencies, and reach greater power densities compared to silicon-based solutions. Its design offers a low forward voltage (VF) drop with a positive temperature coefficient, zero reverse recovery current, and temperature-independent switching behavior. The low profile, low inductance QFN 8x8 package facilitates easy paralleling for various application demands without concerns of thermal runaway. This contributes to reduced cooling requirements, improved thermal performance, and ultimately lower overall system costs across a range of applications.
| Parameter | Symbol | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | DC Blocking Voltage | |
| Continuous Forward Current | IF | 8 | A | TJ = 125 C | Fig. 3 |
| Non-Repetitive Peak Forward Surge Current | IFSM | 51 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | |
| Power Dissipation | Ptot | 36 | W | TJ = 110 C | Fig. 4 |
| i2t Value | i2t | 13 | As | TC = 110 C, tp = 10 ms | |
| Forward Voltage | VF | 1.37 | V | IF = 8 A, Tj = 175 C | Fig. 1 |
| Reverse Current | IR | 15 | A | VR = 650 V, Tj = 175 C | Fig. 2 |
| Total Capacitive Charge | QC | 29 | nC | VR = 400 V, Tj = 25 C | Fig. 5 |
| Total Capacitance | C | 56 | pF | VR = 200 V, Tj = 25 C, f = 1 MHz | Fig. 6 |
| Capacitance Stored Energy | Ec | 4.4 | J | VR = 400 V | Fig. 7 |
| Thermal Resistance, Junction to Case (Typ.) | R, JC | 1.8 | C / W | ||
| Junction Temperature | Tj | -55 to +175 | C | ||
| Case & Storage Temperature | Tc | -55 to +150 | C | ||
| Maximum Processing Temperature | TPROC | 325 | C | 10 min max. | |
| ESD Human Body Model | HBM | 8000 | V | Class 3B | |
| ESD Charge Device Model | CDM | 1000 | V | Class C3 |
Applications: Enterprise Power, Server & Telecom Power Supplies, Switched Mode Power Supplies, Industrial Power Supplies, Boost Power Factor Correction, Bootstrap Diode, LLC Clamping.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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