| Description | TO-263 Single Diodes RoHS |
| Mfr. Part # | C6D20065G-TR |
| Package | TO-263 |
| Model Number | C6D20065G-TR |
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Product Specification
| Description | TO-263 Single Diodes RoHS | Mfr. Part # | C6D20065G-TR |
| Package | TO-263 | Model Number | C6D20065G-TR |
The C6D20065G is a 650 V, 20 A Silicon Carbide (SiC) Schottky Barrier Diode designed to enhance power electronics systems with higher efficiency, faster switching frequencies, and increased power density compared to traditional silicon-based solutions. Its SiC technology offers a low forward voltage drop with a positive temperature coefficient, zero reverse recovery current, and temperature-independent switching behavior. These diodes can be easily paralleled without concern for thermal runaway, contributing to lower overall system costs due to reduced cooling requirements and improved thermal performance. Ideal for demanding applications such as industrial power supplies, uninterruptible and auxiliary power supplies, switch mode power supplies, solar inverters, power factor correction, and server/telecom power supplies.
| Parameter | Symbol | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | DC Blocking Voltage | |
| Continuous Forward Current | IF | 64 | A | TJ = 25 C | Fig. 3 |
| 32 | A | TJ = 125 C | |||
| 20 | A | TJ = 150 C | |||
| Repetitive Peak Forward Surge Current | IFRM | 78 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | |
| 45 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | |||
| Non-Repetitive Forward Surge Current | IFSM | 135 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | Fig. 8 |
| 111 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | |||
| Non-Repetitive Peak Forward Surge Current | IF,Max | 1550 | A | TC = 25 C, tp = 10 s, Pulse | |
| 1290 | A | TC = 110 C, tp = 10 s, Pulse | |||
| Power Dissipation | Ptot | 163 | W | TJ = 25 C | Fig. 4 |
| 71 | W | TJ = 110 C | |||
| i2t value | i2dt | 91 | As | TC= 25C, tp=10ms | |
| 62 | As | TC = 110C, tp=10ms | |||
| Forward Voltage | VF | 1.27 | V | IF = 20 A, Tj = 25 C | Fig. 1 |
| 1.37 | V | IF = 20 A, Tj = 175 C | |||
| Reverse Current | IR | 5 | A | VR = 650 V, Tj = 25 C | Fig. 2 |
| 40 | A | VR = 650 V, Tj = 175 C | |||
| Total Capacitive Charge | QC | 62 | nC | VR = 400 V, Tj = 25 C | Fig. 5 |
| Total Capacitance | C | 1153 | pF | VR = 0 V, Tj = 25 C, f = 1 MHz | Fig. 6 |
| 120 | pF | VR = 200 V, Tj = 25 C, f = 1 MHz | |||
| 96 | pF | VR = 400 V, Tj = 25 C, f = 1 MHz | |||
| Capacitance Stored Energy | Ec | 9.5 | J | VR = 400 V | Fig. 7 |
| Thermal Resistance, Junction to Case (Typical) | R,JC (TYP) | 0.76 | C / W | ||
| Junction Temperature | Tj | -55 to +175 | C | ||
| Case & Storage Temperature | Tc | -55 to +175 | C | ||
| Package Type | TO-263-2 | ||||
| Marking | C6D20065G | ||||
| Electrostatic Discharge (ESD) - Human Body Model | HBM | Class 3B ( 8000 V) | |||
| Electrostatic Discharge (ESD) - Charge Device Model | CDM | Class C3 ( 1000 V) |
| Order Number | Packing Type |
|---|---|
| C6D20065G | Tube |
| C6D20065G-TR | Tape and Reel |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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