Hefei Purple Horn E-Commerce Co., Ltd.
| Non-Repetitive Peak Forward Surge Current | 60A |
| Reverse Leakage Current (Ir) | 12uA |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Diode Configuration | 1 Independent |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Voltage - Forward(Vf@If) | 1.45V |
| Current - Rectified | 30A |
| Description | SiC Diode Independent 650V Through Hole TO-247-3 |
| Mfr. Part # | KN3D20065D |
| Package | TO-247-3 |
| Model Number | KN3D20065D |
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Product Specification
| Non-Repetitive Peak Forward Surge Current | 60A | Reverse Leakage Current (Ir) | 12uA |
| Operating Junction Temperature Range | -55℃~+175℃ | Diode Configuration | 1 Independent |
| Voltage - DC Reverse (Vr) (Max) | 650V | Voltage - Forward(Vf@If) | 1.45V |
| Current - Rectified | 30A | Description | SiC Diode Independent 650V Through Hole TO-247-3 |
| Mfr. Part # | KN3D20065D | Package | TO-247-3 |
| Model Number | KN3D20065D |
The Silicon Carbide Schottky KN3D10065H Diode is a high-performance diode designed for demanding applications. It offers zero forward/reverse recovery current, high blocking voltage, and high-frequency operation, leading to higher system efficiency and reliability. Its positive temperature coefficient on VF and temperature-independent switching behavior make it suitable for parallel device configurations without thermal runaway and for high-temperature applications.
| Parameter | Symbol | Test conditions | Value | Unit |
| Peak Repetitive Reverse Voltage | VRRM | 650 | V | |
| Peak Reverse Surge Voltage | VRSM | 650 | V | |
| DC Blocking Voltage | VR | 650 | V | |
| Continuous Forward Current | IF | TC=25C | 30 | A |
| TC=135C | 12 | A | ||
| TC=145C | 10 | A | ||
| Non repetitive Forward Surge Current | IFSM | TC = 25C, tp=10 ms, Half Sine Pulse | 60 | A |
| TC = 150C, tp=10 ms, Half Sine Pulse | 50 | |||
| TC = 25C, tp=10 s, Square | 460 | |||
| Repetitive peak Forward Surge Current | IFRM | TC = 25C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse | 50 | A |
| TC = 150C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse | 40 | |||
| Total power dissipation | PD | TC=25C | 88 | W |
| Operating Junction Temperature | TJ | -55 to 175 | C | |
| Storage Temperature | TSTG | -55 to 175 | C | |
| DC Blocking Voltage | VDC | IR = 250A,TJ = 25C | 650 | V |
| Forward Voltage | VF | IF = 10A, TJ = 25C | 1.45 - 1.8 | V |
| IF = 10A, TJ = 125C | 1.6 | |||
| IF = 10A, TJ = 175C | 1.7 | |||
| Reverse Current | IR | VR = 650V, TJ = 25C | 12 - 80 | uA |
| VR = 650V, TJ = 125C | 68 | |||
| VR = 650V, TJ = 175C | 190 | |||
| Total Capacitive Charge | QC | VR = 400V | 23 | nC |
| Total Capacitance | C | VR = 1V, TJ = 25C, Freq = 1MHz | 380 | pF |
| VR = 200V, TJ = 25C, Freq = 1MHz | 48 | |||
| VR = 400V, TJ = 25C, Freq = 1MHz | 31 | |||
| Thermal Resistance | Rth(j-c) | junction-case | 1.7 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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