| Non-Repetitive Peak Forward Surge Current | 480A |
| Reverse Leakage Current (Ir) | 30uA |
| Reverse Recovery Time (trr) | 55ns |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Voltage - Forward(Vf@If) | 1.6V@30A |
| Current - Rectified | 30A |
| Description | 480A 55ns 600V 1.6V@30A 30A TO-247 Single Diodes RoHS |
| Mfr. Part # | F60UP60S3 |
| Package | TO-247 |
| Model Number | F60UP60S3 |
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Product Specification
| Non-Repetitive Peak Forward Surge Current | 480A | Reverse Leakage Current (Ir) | 30uA |
| Reverse Recovery Time (trr) | 55ns | Voltage - DC Reverse (Vr) (Max) | 600V |
| Voltage - Forward(Vf@If) | 1.6V@30A | Current - Rectified | 30A |
| Description | 480A 55ns 600V 1.6V@30A 30A TO-247 Single Diodes RoHS | Mfr. Part # | F60UP60S3 |
| Package | TO-247 | Model Number | F60UP60S3 |
FRED Ultrafast Soft Recovery Diode, 600V, 30A2. Optimized for reduced losses and EMI/RFI in high-frequency power conditioning systems. The soft recovery characteristic provides buffering in most applications, making these diodes suitable for power converters and other applications where switching losses are not a significant portion of total losses.
| Parameter | Symbol | Test Conditions | Values | Units |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 600 | V | |
| Continuous Forward Current (Per device) | IF(AV) | TA=110 | 60 | A |
| Continuous Forward Current (Per diode) | IF(AV) | 30 | A | |
| Single Pulse Forward Current | IFSM | TA=25 | 480 | A |
| Maximum Repetitive Forward Current | IFRM | Square wave, 20kHz | 120 | A |
| Operating Junction Temperature | Tj | 175 | ||
| Storage Temperature | Tstg | -55 to +175 | ||
| Breakdown Voltage / Blocking Voltage | VBR | VR=IR=100A | 600 | V |
| Forward Voltage | VF | IF=30 A | 1.0 - 1.6 | V |
| Forward Voltage | VF | IF=30 A, Tj =125 | 1.0 - 1.5 | V |
| Reverse Leakage Current | IR | VR=VRRM | 30 | A |
| Reverse Leakage Current | IR | Tj=150, VR=600V | 30 | A |
| Reverse Recovery Time | trr | IF=0.5A, IR=1A, IRR=0.25A | 55 | ns |
| Reverse Recovery Time | trr | IF=1A,VR=30V, di/dt =200A/us | 28 - 40 | ns |
| Junction-to-Case Thermal Resistance | RthJC | 0.70 | /W |
| Item | MIN | MAX | Units |
|---|---|---|---|
| A | 4.90 | 5.16 | mm |
| A1 | 2.27 | 2.53 | mm |
| A2 | 1.85 | 2.11 | mm |
| B | 1.07 | 1.33 | mm |
| B1 | 1.90 | 2.41 | mm |
| B2 | 1.75 | 2.15 | mm |
| B3 | 2.87 | 3.38 | mm |
| B4 | 2.87 | 3.13 | mm |
| C | 0.55 | 0.68 | mm |
| D | 20.82 | 21.10 | mm |
| D1 | 16.25 | 17.65 | mm |
| D2 | 1.05 | 1.35 | mm |
| E | 15.70 | 16.03 | mm |
| E1 | 13.10 | 14.15 | mm |
| E2 | 3.68 | 5.10 | mm |
| E3 | 1.68 | 2.60 | mm |
| e | 5.44 | mm | |
| L | 19.80 | 20.31 | mm |
| L1 | 4.17 | 4.47 | mm |
| P | 3.50 | 3.70 | mm |
| Q | 5.49 | 6.00 | mm |
| S | 6.04 | 6.30 | mm |
Notes:
1. Exceeding the maximum ratings may cause permanent device failure. Design circuits to avoid exceeding absolute maximum ratings.
2. Ensure proper heat sink installation regarding torsional moment and smoothness.
3. MOSFETs are sensitive to static electricity; protect devices from static discharge during use.
4. Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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