| Reverse Leakage Current (Ir) | 6uA@650V |
| Diode Configuration | Independent |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Voltage - Forward(Vf@If) | 1.35V@20A |
| Current - Rectified | 62A |
| Description | SiC Diode Independent 650V 62A Through Hole TO-220-2 |
| Mfr. Part # | RSS20065A |
| Package | TO-220-2 |
| Model Number | RSS20065A |
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Product Specification
| Reverse Leakage Current (Ir) | 6uA@650V | Diode Configuration | Independent |
| Voltage - DC Reverse (Vr) (Max) | 650V | Voltage - Forward(Vf@If) | 1.35V@20A |
| Current - Rectified | 62A | Description | SiC Diode Independent 650V 62A Through Hole TO-220-2 |
| Mfr. Part # | RSS20065A | Package | TO-220-2 |
| Model Number | RSS20065A |
The RSS20065A is a Silicon Carbide Schottky Diode designed for high-performance power applications. It features zero reverse recovery current and zero forward recovery voltage, along with a positive temperature coefficient on VF and temperature-independent switching. This unipolar device offers a 175C operating junction temperature, enabling reduction in heatsink size and parallel operation without thermal runaway. Key applications include Switch Mode Power Supplies, Power Factor Correction, and Motor drives, PV Inverters, and Wind Power Stations.
| Parameter | Symbol | Value | Unit | Test Conditions | Note |
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | TC = 25 | |
| Surge Peak Reverse Voltage | VRSM | 650 | V | TC = 25 | |
| DC Blocking Voltage | VR | 650 | V | TC = 25 | |
| Forward Current | IF | 62 | A | TC 25 | |
| 29 | TC 135 | ||||
| 20 | TC 154 | Fig. 3 | |||
| Non-Repetitive Forward Surge Current | IFSM | 172 | A | TC = 25, tp = 10ms, Half Sine Wave | |
| 156 | TC = 110, tp = 10ms, Half Sine Wave | ||||
| Repetitive Peak Forward Surge Current | IFRM | 164 | A | TC = 25, tp = 10ms, Half Sine Wave | |
| Power Dissipation | Ptot | 258 | W | TC = 25 | Fig. 4 |
| Maximum Case Temperature | TC | 154 | |||
| Operating Junction and Storage Temperature | TJ,TSTG | -55 to 175 | |||
| Forward Voltage | VF | 1.35 (Typ.), 1.7 (Max.) | V | IF = 20A, TJ = 25 | Fig.1 |
| 1.6 | IF = 20A, TJ = 175 | ||||
| Reverse Current | IR | 6 (Typ.), 15 (Max.) | A | VR = 650V, TJ = 25 | Fig.2 |
| 100 | VR = 650V, TJ = 175 | ||||
| Total Capacitance | C | 906 | pF | VR = 1V, TJ = 25, f = 1MHz | Fig.5 |
| 122 | VR = 200V, TJ = 25, f = 1MHz | ||||
| 118 | VR = 400V, TJ = 25, f = 1MHz | ||||
| Total Capacitive Charge | QC | 62 | nC | VR =400V | Fig.6 |
| Capacitance Stored Energy | Ec | 10 | uJ | VR =400V | Fig.7 |
| Thermal Resistance from Junction to Case | RJC | 0.58 | /W | Fig.8 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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