| Non-Repetitive Peak Forward Surge Current | 65A |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Diode Configuration | 1 Independent |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Reverse Leakage Current (Ir) | 20uA@650V |
| Voltage - Forward(Vf@If) | 1.4V@6A |
| Current - Rectified | 6A |
| Description | 65A 1 Independent 650V 1.4V@6A 6A TO-220F Single Diodes RoHS |
| Mfr. Part # | RSS06065F |
| Package | TO-220F |
| Model Number | RSS06065F |
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Product Specification
| Non-Repetitive Peak Forward Surge Current | 65A | Operating Junction Temperature Range | -55℃~+175℃ |
| Diode Configuration | 1 Independent | Voltage - DC Reverse (Vr) (Max) | 650V |
| Reverse Leakage Current (Ir) | 20uA@650V | Voltage - Forward(Vf@If) | 1.4V@6A |
| Current - Rectified | 6A | Description | 65A 1 Independent 650V 1.4V@6A 6A TO-220F Single Diodes RoHS |
| Mfr. Part # | RSS06065F | Package | TO-220F |
| Model Number | RSS06065F |
The RSS06065F is a Silicon Carbide Schottky Diode designed for high-performance applications such as Power Factor Correction, Sever Mode Power Supplies, and Uninterruptible Power Supplies. It features a low forward voltage drop, high-speed switching capabilities, and a positive temperature coefficient, ensuring temperature-independent switching behavior.
| Part Number | VRRM | IF (TC=150) | QC | Package | Marking | Packing Qty. |
| RSS06065F | 650V | 6A | 17nC | TO-220F | RSS06065F | 50 PCS |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
| VRRM | Repetitive Peak Reverse Voltage | 650 | V | ||
| VRSM | Surge Peak Reverse Voltage | 650 | V | ||
| VR | DC Blocking Voltage | 650 | V | ||
| IF | Forward Current | 6 | A | TC = 150 | |
| IFSM | Non-Repetitive Forward Surge Current | 65 | A | TC = 25, tp = 10ms Half Sine Wave | |
| IF,Max | Non-Repetitive Peak Forward Surge Current | 520 | A | TC=25C, tP= 10 s, Pulse | |
| IFRM | Repetitive Peak Forward Surge Current | 40 | A | TC = 25, tp = 10ms Half Sine Wave | |
| TC | Maximum Case Temperature | 153 | |||
| TJ,TSTG | Operating Junction and Storage Temperature | -55 to175 |
| Symbol | Parameter | Typ. | Max. | Unit | Test Conditions | Note |
| VF | Forward Voltage | 1.40 | 1.75 | V | IF = 6A, TJ = 25 | |
| VF | Forward Voltage | 1.7 | 2.0 | V | IF = 6A, TJ = 175 | |
| IR | Reverse Current | 2 | 40 | A | VR = 650V, TJ = 25 | |
| IR | Reverse Current | 20 | 200 | A | VR = 650V, TJ = 175 | |
| Cj | Total Capacitance | 33 | pF | VR=0V, TJ = 25, f=1MHz | ||
| Cj | Total Capacitance | 33 | pF | VR=200V, TJ = 25, f=1MHz | ||
| Cj | Total Capacitance | 28 | pF | VR=400V, TJ = 25, f = 1MHz | ||
| QC | Total Capacitive Charge | 17 | nC | VR =400V,TJ = 25 | Qc= 0 | |
| Ec | Capacitance Stored Energy | 4.3 | uJ | VR =400V |
| Symbol | Parameter | Typ. | Unit | Note |
| RJC | Thermal Resistance from Junction to Case | 2.7 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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