| Reverse Leakage Current (Ir) | 5uA@650V |
| Diode Configuration | Independent |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Voltage - Forward(Vf@If) | 1.37V@10A |
| Current - Rectified | 32A |
| Description | SiC Diode Independent 650V 32A Through Hole TO-220-2 |
| Mfr. Part # | RSS10065A |
| Package | TO-220-2 |
| Model Number | RSS10065A |
View Detail Information
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Product Specification
| Reverse Leakage Current (Ir) | 5uA@650V | Diode Configuration | Independent |
| Voltage - DC Reverse (Vr) (Max) | 650V | Voltage - Forward(Vf@If) | 1.37V@10A |
| Current - Rectified | 32A | Description | SiC Diode Independent 650V 32A Through Hole TO-220-2 |
| Mfr. Part # | RSS10065A | Package | TO-220-2 |
| Model Number | RSS10065A |
The Reasunos RSS10065A is a Silicon Carbide Schottky Diode designed for high-performance power applications. It offers zero reverse recovery current and zero forward recovery voltage, leading to significantly reduced switching losses. This unipolar device boasts a positive temperature coefficient on VF and temperature-independent switching, making it ideal for demanding environments up to 175C. Its benefits include the ability to replace bipolar devices, reduction in heatsink size, and parallel operation without thermal runaway.
| Parameter | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | TC = 25 |
| Surge Peak Reverse Voltage | VRSM | 650 | V | TC = 25 |
| DC Blocking Voltage | VR | 650 | V | TC = 25 |
| Forward Current | IF | 32 | A | TC 25 |
| 15 | A | TC 135 | ||
| 10 | A | TC 154 | ||
| Non-Repetitive Forward Surge Current | IFSM | 96 | A | TC = 25, tp = 10ms, Half Sine Wave |
| 83 | A | TC = 110, tp = 10ms, Half Sine Wave | ||
| Repetitive Peak Forward Surge Current | IFRM | 85 | A | TC = 25, tp = 10ms, Half Sine Wave |
| Power Dissipation | Ptot | 127 | W | TC = 25 |
| Maximum Case Temperature | TC | 154 | ||
| Operating Junction and Storage Temperature | TJ,TSTG | -55 to 175 | ||
| Forward Voltage | VF | 1.37 (Typ.) | V | IF = 10A, TJ = 25 |
| 1.6 (Max.) | V | IF = 10A, TJ = 175 | ||
| Reverse Current | IR | 5 (Typ.) | A | VR = 650V, TJ = 25 |
| 60 (Max.) | A | VR = 650V, TJ = 175 | ||
| Total Capacitance | C | 57 (Typ.) | pF | VR = 200V, TJ = 25, f = 1MHz |
| Total Capacitive Charge | QC | 30 | nC | VR =400V |
| Capacitance Stored Energy | Ec | 4.8 | uJ | VR =400V |
| Thermal Resistance from Junction to Case | RJC | 1.175 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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