| Non-Repetitive Peak Forward Surge Current | 50A |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Diode Configuration | 1 Independent |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Reverse Leakage Current (Ir) | 30uA@650V |
| Voltage - Forward(Vf@If) | 1.4V@6A |
| Current - Rectified | 6A |
| Description | 50A 1 Independent 650V 1.4V@6A 6A TO-220-2 Single Diodes RoHS |
| Mfr. Part # | RSS06065B |
| Package | TO-220-2 |
| Model Number | RSS06065B |
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Product Specification
| Non-Repetitive Peak Forward Surge Current | 50A | Operating Junction Temperature Range | -55℃~+175℃ |
| Diode Configuration | 1 Independent | Voltage - DC Reverse (Vr) (Max) | 650V |
| Reverse Leakage Current (Ir) | 30uA@650V | Voltage - Forward(Vf@If) | 1.4V@6A |
| Current - Rectified | 6A | Description | 50A 1 Independent 650V 1.4V@6A 6A TO-220-2 Single Diodes RoHS |
| Mfr. Part # | RSS06065B | Package | TO-220-2 |
| Model Number | RSS06065B |
The RSS06065B is a Silicon Carbide Schottky Diode designed for applications requiring high-speed switching and low forward voltage drop. It features a positive temperature coefficient and temperature-independent switching behavior, making it suitable for Power Factor Correction, Sever Mode Power Supplies, and Uninterruptible Power Supply systems.
| Part Number | VRRM (V) | IF (A) | QC (nC) | Package | Marking | Packing | Qty. |
|---|---|---|---|---|---|---|---|
| RSS06065B | 650 | 6 (TC150) | 23 | TO-220-2 | RSS06065B | Tube | 50 PCS |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VRRM | Repetitive Peak Reverse Voltage | 650 | V | ||
| VRSM | Surge Peak Reverse Voltage | 650 | V | ||
| VR | DC Blocking Voltage | 650 | V | ||
| IF | Forward Current | 6 | A | TC150 | |
| IFSM | Non-Repetitive Forward Surge Current | 50 | A | TC = 25, tp = 10ms Half Sine Wave | |
| IF,Max | Non-Repetitive Peak Forward Surge Current | 520 | A | TC=25C, tP= 10 s, Pulse | |
| IFRM | Repetitive Peak Forward Surge Current | 35 | A | TC = 25, tp = 10ms Half Sine Wave | |
| Ptot | Power Dissipation | 70 | W | TC = 25 | |
| Ptot | Power Dissipation | W | TC = 110 | ||
| TJ,TSTG | Operating Junction and Storage Temperature | -55 to175 |
| Symbol | Parameter | Typ. | Max. | Unit | Test Conditions | Note |
|---|---|---|---|---|---|---|
| VF | Forward Voltage | 1.4 | 1.8 | V | IF =6A, TJ = 25 | |
| VF | Forward Voltage | 1.6 | V | IF =6A, TJ = 175 | ||
| IR | Reverse Current | 2 | 120 | A | VR =650V, TJ = 25 | |
| IR | Reverse Current | 15 | 30 | A | VR = 650V, TJ = 175 | |
| C | Total Capacitance | 423 | pF | VR=0V, TJ = 25, f=1MHz | ||
| C | Total Capacitance | 44 | pF | VR=200V, TJ = 25, f=1MHz | ||
| C | Total Capacitance | 37 | pF | VR=400V, TJ = 25, f = 1MHz | ||
| QC | Total Capacitive Charge | 23 | nC | VR =400V,TJ = 25 | Qc= 0 VR C V dV |
| Symbol | Parameter | Typ. | Unit | Note |
|---|---|---|---|---|
| RJC | Thermal Resistance from Junction to Case | 2.3 | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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