| Reverse Leakage Current (Ir) | 2uA@1200V |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Diode Configuration | Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 1.2kV |
| Voltage - Forward(Vf@If) | 1.43V@10A |
| Current - Rectified | - |
| Description | Common Cathode 1.2kV 1.43V@10A TO-247-3L Single Diodes RoHS |
| Mfr. Part # | RSS20120K |
| Package | TO-247-3L |
| Model Number | RSS20120K |
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Product Specification
| Reverse Leakage Current (Ir) | 2uA@1200V | Operating Junction Temperature Range | -55℃~+175℃ |
| Diode Configuration | Common Cathode | Voltage - DC Reverse (Vr) (Max) | 1.2kV |
| Voltage - Forward(Vf@If) | 1.43V@10A | Current - Rectified | - |
| Description | Common Cathode 1.2kV 1.43V@10A TO-247-3L Single Diodes RoHS | Mfr. Part # | RSS20120K |
| Package | TO-247-3L | Model Number | RSS20120K |
The Reasunos RSS20120K is a Silicon Carbide Schottky Diode designed for high-performance switching applications. It features zero reverse recovery current and zero forward recovery voltage, leading to reduced switching losses and enabling the replacement of bipolar devices with unipolar ones. Its positive temperature coefficient on VF and temperature-independent switching contribute to reliable operation, even at high temperatures up to 175C. This diode is ideal for applications requiring reduced heatsink size and parallel device operation without thermal runaway.
| Part Number | VRRM (V) | IF (A) | QC (nC) | Package | Marking | Packing | Qty. |
| RSS20120K | 1200 | 36 (TC135) | 104 | TO-247-3 | RSS20120K | Tube | 30 PCS |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
| VRRM | Repetitive Peak Reverse Voltage | 1200 | V | TC = 25 | |
| VRSM | Surge Peak Reverse Voltage | 1200 | V | TC = 25 | |
| VR | DC Blocking Voltage | 1200 | V | TC = 25 | |
| IF | Forward Current | 36*2 / 18*2 / 10/2 | A | TC 25 / TC 135 / TC 159 | Fig. 3 |
| IFSM | Non-Repetitive Forward Surge Current | 60*2 / 45*2 | A | TC = 25, tp = 10ms, Half Sine Wave / TC = 110, tp = 10ms, Half Sine Wave | |
| IFRM | Repetitive Peak Forward Surge Current | 55*2 | A | TC = 25, tp = 10ms, Half Sine Wave | |
| Ptot | Power Dissipation | 204*2 | W | TC = 25 | Fig. 4 |
| TC | Maximum Case Temperature | 159 | |||
| TJ,TSTG | Operating Junction and Storage Temperature | -55 to 175 | |||
| VF | Forward Voltage | 1.43 (Typ.) / 1.7 (Max.) | V | IF = 10A, TJ = 25 / IF = 10A, TJ = 175 | Fig.1 |
| IR | Reverse Current | 2 (Typ.) / 60 (Max.) | A | VR = 1200V, TJ = 25 / VR = 1200V, TJ = 175 | Fig.2 |
| C | Total Capacitance | 110 (Typ.) / 78 (Typ.) | pF | VR = 1V, TJ = 25, f = 1MHz / VR = 800V, TJ = 25, f = 1MHz | Fig.5 |
| QC | Total Capacitive Charge | 52 | nC | VR =800V | Fig.6 |
| Ec | Capacitance Stored Energy | 15.8 | uJ | VR =800V | Fig.7 |
| RJC | Thermal Resistance from Junction to Case | 0.736 | /W | Fig.8 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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