| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 500mW |
| Transition frequency(fT) | 120MHz |
| Number | 1 NPN |
| Current - Collector(Ic) | 2A |
| Collector - Emitter Voltage VCEO | 50V |
| Description | 500mW 2A 50V SOT-89 Single Bipolar Transistors RoHS |
| Mfr. Part # | 2SA1213 |
| Package | SOT-89 |
| Model Number | 2SA1213 |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 500mW | Transition frequency(fT) | 120MHz |
| Number | 1 NPN | Current - Collector(Ic) | 2A |
| Collector - Emitter Voltage VCEO | 50V | Description | 500mW 2A 50V SOT-89 Single Bipolar Transistors RoHS |
| Mfr. Part # | 2SA1213 | Package | SOT-89 |
| Model Number | 2SA1213 |
This NPN transistor is designed for high-speed switching applications and features a small flat package. It offers a low collector-emitter saturation voltage and is complementary to the 2SA1213. Ideal for use in power amplifier and switching circuits.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=50V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | A | ||
| DC current gain (1) | hFE(1) | VCE=2V, IC=0.5A | 70 | 240 | ||
| DC current gain (2) | hFE(2) | VCE=2V, IC=2A | 20 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=1A, IB=50mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=1A, IB=50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=2V, IC=0.5A | 120 | MHz | ||
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 30 | pF |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | V |
| Collector-Emitter Voltage | VCEO | 50 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 2 | A |
| Collector Power Dissipation | PC | 500 | mW |
| Thermal Resistance Junction To Ambient | RJA | 250 | /W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -55~+150 |
| RANK | RANGE | MARKING |
|---|---|---|
| O | 70140 | MO |
| Y | 120240 | MY |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!