| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 1W |
| Transition frequency(fT) | 90MHz |
| type | NPN |
| Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 30V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Surface Mount SOT-89 |
| Mfr. Part # | 2SD882PU |
| Package | SOT-89 |
| Model Number | 2SD882PU |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 1W | Transition frequency(fT) | 90MHz |
| type | NPN | Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 30V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Surface Mount SOT-89 | Mfr. Part # | 2SD882PU |
| Package | SOT-89 | Model Number | 2SD882PU |
The 2SD882U is an NPN Silicon Power Transistor designed for various electronic applications. It is categorized into four groups (R, Q, P, E) based on its DC current gain (hFE). This transistor offers robust performance with high current handling capabilities and defined saturation voltages, making it suitable for power switching and amplification circuits.
| Parameter | Symbol | Value | Unit | Conditions | |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Collector to Base Voltage | VCBO | 40 | V | ||
| Collector to Emitter Voltage | VCEO | 30 | V | ||
| Emitter to Base Voltage | VEBO | 5 | V | ||
| Collector Current | IC | 3 | A | ||
| Peak Collector Current (t = 10 ms) | ICP | 7 | A | ||
| Total power dissipation (Ta = 25 OC) | Ptot | 1 | W | (Ta = 25 OC) | |
| Total power dissipation (Tc = 25 OC) | Ptot | 10 | W | (Tc = 25 OC) | |
| Junction Temperature | Tj | 150 | OC | ||
| Storage Temperature Range | Tstg | -55 to +150 | OC | ||
| Characteristics at Ta = 25 OC | |||||
| DC Current Gain (Group R) | hFE | 30 | - | VCE = 2 V, IC = 20 mA | |
| DC Current Gain (Group Q) | hFE | 60 | - | VCE = 2 V, IC = 20 mA | |
| DC Current Gain (Group P) | hFE | 100 | - | VCE = 2 V, IC = 20 mA | |
| DC Current Gain (Group E) | hFE | 160 | - | VCE = 2 V, IC = 20 mA | |
| DC Current Gain (Group R) | hFE | - | 120 | VCE = 2 V, IC = 1 A | |
| DC Current Gain (Group Q) | hFE | - | 200 | VCE = 2 V, IC = 1 A | |
| DC Current Gain (Group P) | hFE | - | 320 | VCE = 2 V, IC = 1 A | |
| DC Current Gain (Group E) | hFE | - | 400 | VCE = 2 V, IC = 1 A | |
| Collector Base Cutoff Current | ICBO | - | 1 | A | VCB = 30 V |
| Emitter Base Cutoff Current | IEBO | - | 1 | A | VEB = 3 V |
| Collector Emitter Saturation Voltage | VCE(sat) | - | 0.5 | V | IC = 2 A, IB = 0.2 A |
| Base Emitter Saturation Voltage | VBE(sat) | - | 2 | V | IC = 2 A, IB = 0.2 A |
| Gain Bandwidth Product | fT | - | 90 | MHz | VCE = 5 V, IC = 0.1 A |
| Output Capacitance | Cob | - | 45 | pF | VCB = 10 V, f = 1 MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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