| Emitter-Base Voltage(Vebo) | 7V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 180MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 150mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount SOT-323 |
| Mfr. Part # | MMBTSC4081W |
| Package | SOT-323 |
| Model Number | MMBTSC4081W |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 7V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 180MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 150mA | Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount SOT-323 |
| Mfr. Part # | MMBTSC4081W | Package | SOT-323 |
| Model Number | MMBTSC4081W |
This NPN Silicon Epitaxial Planar Transistor is designed for various electronic applications. It is subdivided into three groups (Q, R, and S) based on its DC current gain, offering flexibility for different circuit requirements. With robust absolute maximum ratings and key electrical characteristics detailed, this transistor provides reliable performance for demanding electronic designs.
| Parameter | Symbol | Group | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||||
| Collector Base Voltage | VCBO | 60 | V | ||||
| Collector Emitter Voltage | VCEO | 50 | V | ||||
| Emitter Base Voltage | VEBO | 7 | V | ||||
| Collector Current | IC | 150 | mA | ||||
| Power Dissipation | Ptot | 200 | mW | ||||
| Junction Temperature | Tj | 150 | C | ||||
| Storage Temperature Range | Tstg | -55 | 150 | C | |||
| Characteristics (Ta = 25 C) | |||||||
| DC Current Gain | hFE | Q | 120 | 180 | 270 | - | VCE = 6 V, IC = 1 mA |
| DC Current Gain | hFE | R | 270 | 390 | 560 | - | VCE = 6 V, IC = 1 mA |
| DC Current Gain | hFE | S | - | - | - | - | VCE = 6 V, IC = 1 mA |
| Collector Base Cutoff Current | ICBO | - | - | 0.1 | A | VCB = 60 V | |
| Emitter Base Cutoff Current | IEBO | - | - | 0.1 | A | VEB = 7 V | |
| Collector Base Breakdown Voltage | V(BR)CBO | 60 | - | - | V | IC = 50 A | |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | V | IC = 1 mA | |
| Emitter Base Breakdown Voltage | V(BR)EBO | 7 | - | - | V | IE = 50 A | |
| Collector Emitter Saturation Voltage | VCE(sat) | - | - | 0.4 | V | IC = 50 mA, IB = 5 mA | |
| Transition Frequency | fT | - | 180 | - | MHz | VCE = 12 V, -IE = 2 mA, f = 100 MHz | |
| Collector Output Capacitance | Cob | - | 2 | 3.5 | pF | VCB = 12 V, f = 1 MHz | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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