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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Electronic Design Transistor CBI MMBTSC4081W NPN Silicon Epitaxial Planar with
China Electronic Design Transistor CBI MMBTSC4081W NPN Silicon Epitaxial Planar with

  1. China Electronic Design Transistor CBI MMBTSC4081W NPN Silicon Epitaxial Planar with

Electronic Design Transistor CBI MMBTSC4081W NPN Silicon Epitaxial Planar with

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Emitter-Base Voltage(Vebo) 7V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 200mW
Transition frequency(fT) 180MHz
type NPN
Number 1 NPN
Current - Collector(Ic) 150mA
Collector - Emitter Voltage VCEO 50V
Operating Temperature -
Description Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount SOT-323
Mfr. Part # MMBTSC4081W
Package SOT-323
Model Number MMBTSC4081W

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  2. Company Details

Product Specification

Emitter-Base Voltage(Vebo) 7V Current - Collector Cutoff 100nA
Pd - Power Dissipation 200mW Transition frequency(fT) 180MHz
type NPN Number 1 NPN
Current - Collector(Ic) 150mA Collector - Emitter Voltage VCEO 50V
Operating Temperature - Description Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount SOT-323
Mfr. Part # MMBTSC4081W Package SOT-323
Model Number MMBTSC4081W

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for various electronic applications. It is subdivided into three groups (Q, R, and S) based on its DC current gain, offering flexibility for different circuit requirements. With robust absolute maximum ratings and key electrical characteristics detailed, this transistor provides reliable performance for demanding electronic designs.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Group Min. Typ. Max. Unit Conditions
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 60 V
Collector Emitter Voltage VCEO 50 V
Emitter Base Voltage VEBO 7 V
Collector Current IC 150 mA
Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 150 C
Characteristics (Ta = 25 C)
DC Current Gain hFE Q 120 180 270 - VCE = 6 V, IC = 1 mA
DC Current Gain hFE R 270 390 560 - VCE = 6 V, IC = 1 mA
DC Current Gain hFE S - - - - VCE = 6 V, IC = 1 mA
Collector Base Cutoff Current ICBO - - 0.1 A VCB = 60 V
Emitter Base Cutoff Current IEBO - - 0.1 A VEB = 7 V
Collector Base Breakdown Voltage V(BR)CBO 60 - - V IC = 50 A
Collector Emitter Breakdown Voltage V(BR)CEO 50 - - V IC = 1 mA
Emitter Base Breakdown Voltage V(BR)EBO 7 - - V IE = 50 A
Collector Emitter Saturation Voltage VCE(sat) - - 0.4 V IC = 50 mA, IB = 5 mA
Transition Frequency fT - 180 - MHz VCE = 12 V, -IE = 2 mA, f = 100 MHz
Collector Output Capacitance Cob - 2 3.5 pF VCB = 12 V, f = 1 MHz

2410121653_CBI-MMBTSC4081W_C2928251.pdf

Company Details

Bronze Gleitlager

,

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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