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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China SOT23 Plastic PNP Transistor Driver Device CBI MMBTA55 Suitable for Electronic
China SOT23 Plastic PNP Transistor Driver Device CBI MMBTA55 Suitable for Electronic

  1. China SOT23 Plastic PNP Transistor Driver Device CBI MMBTA55 Suitable for Electronic

SOT23 Plastic PNP Transistor Driver Device CBI MMBTA55 Suitable for Electronic

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Emitter-Base Voltage(Vebo) 4V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 225mW
Transition frequency(fT) 50MHz
type PNP
Number 1 PNP
Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 60V
Description Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 225mW Surface Mount SOT-23
Mfr. Part # MMBTA55
Package SOT-23
Model Number MMBTA55

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  1. Product Details
  2. Company Details

Product Specification

Emitter-Base Voltage(Vebo) 4V Current - Collector Cutoff 100nA
Pd - Power Dissipation 225mW Transition frequency(fT) 50MHz
type PNP Number 1 PNP
Current - Collector(Ic) 500mA Collector - Emitter Voltage VCEO 60V
Description Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 225mW Surface Mount SOT-23 Mfr. Part # MMBTA55
Package SOT-23 Model Number MMBTA55

Product Overview

The MMBTA55 is a PNP transistor in a SOT-23 plastic-encapsulated package, designed for use as a driver transistor. It offers specific voltage and current ratings suitable for various electronic applications.

Product Attributes

  • Package Type: SOT-23 Plastic
  • Transistor Type: PNP
  • Marking Code: 1H

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -4 V
Collector Current IC -500 mA
Collector Power Dissipation PC 225 mW
Thermal Resistance From Junction To Ambient RJA 556 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Electrical Characteristics (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -4 V
Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 A
Collector cut-off current ICEO VCE=-60V, IB=0 -0.1 A
DC current gain hFE(1) VCE=-1V, IC=-10mA 100 400
DC current gain hFE(2) VCE=-1V, IC=-100mA 100
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.25 V
Base-emitter voltage VBE VCE=-1V, IC=-100mA -1.2 V
Transition frequency fT VCE=-1V,IC=-100mA, f=100MHz 50 MHz

Package Outline

Plastic surface mounted package; 3 leads SOT-23.

Pinout

1. Base
2. Emitter
3. Collector


2409302302_CBI-MMBTA55_C2836106.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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