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Hefei Purple Horn E-Commerce Co., Ltd.

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China Electronic Component PNP Transistor Semiconductor Device Collector Current 05A
China Electronic Component PNP Transistor Semiconductor Device Collector Current 05A

  1. China Electronic Component PNP Transistor Semiconductor Device Collector Current 05A

Electronic Component PNP Transistor Semiconductor Device Collector Current 05A

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
Pd - Power Dissipation 300mW
Transition frequency(fT) 150MHz
type PNP
Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 25V
Description Bipolar (BJT) Transistor PNP 25V 0.5A 150MHz 0.3W Surface Mount SOT323
Mfr. Part # S8550W
Package SOT323
Model Number S8550W

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
Pd - Power Dissipation 300mW Transition frequency(fT) 150MHz
type PNP Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 25V Description Bipolar (BJT) Transistor PNP 25V 0.5A 150MHz 0.3W Surface Mount SOT323
Mfr. Part # S8550W Package SOT323
Model Number S8550W

Product Overview

This PNP transistor, complementary to the S8050, offers a collector current of 0.5A. It is suitable for various electronic applications requiring a PNP semiconductor component. The device is marked as 2TY and comes in a SOT-323 package.

Product Attributes

  • Marking: 2TY
  • Package: SOT-323
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Test Conditions Min Max Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Collector Current - Continuous IC -0.5 A
Collector Power Dissipation PC 0.3 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC = -100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 A
Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 A
DC current gain hFE(1) VCE= -1V, IC= -50mA 120 400
DC current gain hFE(2) VCE= -1V, IC= -500mA 50
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V
Transition frequency fT VCE= -6V, IC= -20mA, f=30MHz 150 MHz
CLASSIFICATION OF hFE(1)
Rank Range
L 120-200
H 200-350
J 300-400

2410121503_CBI-S8550W_C5362108.pdf

Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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