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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Electronic NPN Transistor CBI 2SD1623SU with Low Saturation Voltage and High
China Electronic NPN Transistor CBI 2SD1623SU with Low Saturation Voltage and High

  1. China Electronic NPN Transistor CBI 2SD1623SU with Low Saturation Voltage and High

Electronic NPN Transistor CBI 2SD1623SU with Low Saturation Voltage and High

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Current - Collector Cutoff 100nA
Emitter-Base Voltage(Vebo) 6V
Pd - Power Dissipation 1.3W
Transition frequency(fT) 150MHz
type NPN
Current - Collector(Ic) 2A
Collector - Emitter Voltage VCEO 50V
Description Bipolar (BJT) Transistor NPN 50V 2A 150MHz 1.3W Surface Mount SOT-89
Mfr. Part # 2SD1623SU
Package SOT-89
Model Number 2SD1623SU

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  1. Product Details
  2. Company Details

Product Specification

Current - Collector Cutoff 100nA Emitter-Base Voltage(Vebo) 6V
Pd - Power Dissipation 1.3W Transition frequency(fT) 150MHz
type NPN Current - Collector(Ic) 2A
Collector - Emitter Voltage VCEO 50V Description Bipolar (BJT) Transistor NPN 50V 2A 150MHz 1.3W Surface Mount SOT-89
Mfr. Part # 2SD1623SU Package SOT-89
Model Number 2SD1623SU

Product Overview

The 2SD1623 is a high-performance NPN transistor designed for various electronic applications. It features a low collector-to-emitter saturation voltage, large current capacity with a wide Area of Safe Operation (ASO), and fast switching speeds. This transistor is complementary to the 2SB1123 PNP transistors, making it suitable for a wide range of circuit designs.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: NPN Transistor
  • Package: SOT-89

Technical Specifications

Absolute Maximum Ratings (Ta = 25)

Parameter Symbol Rating Unit
Collector - Base Voltage VCBO 60 V
Collector - Emitter Voltage VCEO 50 V
Emitter - Base Voltage VEBO 6 V
Collector Current - Continuous IC 2 A
Collector Current - Pulse ICP 4 A
Collector Power Dissipation (Note.1) PC 0.5 (Note.1)
1.3
W
Junction Temperature TJ 150
Storage Temperature Range Tstg -55 to 150

Note.1: Mounted on ceramic board (250mm 0.8mm)

Electrical Characteristics (Ta = 5)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage VCBO Ic= 100 uAIE= 0 60 V
Collector-emitter breakdown voltage VCEO Ic= 1 mARBE= 50 V
Emitter -base breakdown voltage VEBO IE= 100 uAIC= 0 6 V
Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 uA
Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 uA
Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=50 mA 0.15 0.4 V
Base - emitter saturation voltage VBE(sat) IC=1 A, IB=50 mA 0.9 1.2 V
DC current gain hFE VCE= 2V, IC= 100 mA 100 560
VCE= 2V, IC= 1.5 A 40
Turn-ON Time ton 60 ns
Storage Time tstg 550 ns
Fall Time tf 30 ns
Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 12 pF
Transition frequency fT VCE= 10V, IC= 50mA 150 MHz

Classification of hfe(1)

Type Range Marking
2SD1623-R 100-200 DF R
2SD1623-S 140-280 DF S
2SD1623-T 200-400 DF T
2SD1623-U 280-560 DF U

2411220305_CBI-2SD1623SU_C5362143.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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