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Hefei Purple Horn E-Commerce Co., Ltd.

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China Complementary transistor pair NPN and PNP in SOT-363 package CBI MMDT3946DW for
China Complementary transistor pair NPN and PNP in SOT-363 package CBI MMDT3946DW for

  1. China Complementary transistor pair NPN and PNP in SOT-363 package CBI MMDT3946DW for

Complementary transistor pair NPN and PNP in SOT-363 package CBI MMDT3946DW for

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 50nA
Pd - Power Dissipation 200mW
Transition frequency(fT) 300MHz
type NPN+PNP
Number 1 NPN + 1 PNP
Current - Collector(Ic) 200mA
Collector - Emitter Voltage VCEO 40V
Operating Temperature -
Description Bipolar (BJT) Transistor NPN+PNP 40V 0.2A 300MHz 0.2W Surface Mount SOT-363
Mfr. Part # MMDT3946DW
Package SOT-363
Model Number MMDT3946DW

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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 50nA
Pd - Power Dissipation 200mW Transition frequency(fT) 300MHz
type NPN+PNP Number 1 NPN + 1 PNP
Current - Collector(Ic) 200mA Collector - Emitter Voltage VCEO 40V
Operating Temperature - Description Bipolar (BJT) Transistor NPN+PNP 40V 0.2A 300MHz 0.2W Surface Mount SOT-363
Mfr. Part # MMDT3946DW Package SOT-363
Model Number MMDT3946DW

Dual Transistor (NPN + PNP) - SOT-363 Package

This complementary pair of transistors, housed in a SOT-363 plastic-encapsulated package, features one 3904-type NPN transistor and one 3906-type PNP transistor. Constructed with epitaxial planar die technology, these transistors are ideally suited for low-power amplification and switching applications. The device is identified by the making code K46.

Product Attributes

  • Package Type: SOT-363
  • Construction: Epitaxial Planar Die
  • Complementary Pair: Yes (NPN + PNP)
  • NPN Type: 3904
  • PNP Type: 3906
  • Making Code: K46

Technical Specifications

General Maximum Ratings (Ta=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current - Continuous 0.2 A
PC Collector Power Dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

NPN 3904 Electrical Characteristics (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 10A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 5 V
Collector cut-off current ICBO VCB= 30 V , IE=0 0.05 A
Collector cut-off current ICEO VCE= 30 V , IB=0 0.5 A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.05 A
DC current gain hFE(1) VCE=1V, IC= 0.1mA 40
hFE(2) VCE=1V, IC= 1mA 70
hFE(3) VCE=1V, IC= 10mA 100 300
hFE(4) VCE=1V, IC= 50mA 60
hFE(5) VCE=1V, IC= 100mA 30
Collector-emitter saturation voltage VCE(sat)1 IC=10 mA, IB=1mA 0.2 V
VCE(sat)2 IC=50 mA, IB=5mA 0.3 V
Base-emitter saturation voltage VBE(sat)1 IC= 10 mA, IB=1mA 0.65 0.85 V
VBE(sat)2 IC= 50 mA, IB=5mA 0.95 V
Transition frequency fT VCE=20V,IC=20mA, f=100MHz 300 MHz
Noise figure NF VCE=5V,IC=0.1mA, f=1KHz,Rg=1K 5 dB
Output capacitance Cob VCB=5V,IE=0,f=1MHz 4 pF
Delay time td 35 nS
Rise time tr VCC=3V, VBE=0.5V IC=10mA , IB1=- IB2=1mA 35 nS
Storage time tS 200 nS
Fall time tf VCC=3V, IC=10mA IB1=-IB2= 1mA 50 nS

MMDT3946DW Maximum Ratings (Ta=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current - Continuous -0.2 A
PC Collector Power Dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

PNP 3906 Electrical Characteristics (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-30V,IE=0 -0.05 A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.05 A
DC current gain hFE(1) VCE=-1V,IC=-0.1mA 60
hFE(2) VCE=-1V,IC=-1mA 80
hFE(3) VCE=-1V,IC=-10mA 100 300
hFE(4) VCE=-1V,IC=-50mA 60
hFE(5) VCE=-1V,IC=-100mA 30
Collector-emitter saturation voltage VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V
VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V
Base-emitter saturation voltage VBE(sat)1 IC=-10mA,IB=-1mA -0.65 -0.85 V
VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V
Transition frequency fT VCE=-20V,IC=-10mA,f=100MHz 250 MHz
Collector output capacitance Cob VCB=-5V,IE=0,f=1MHz 4.5 pF
Noise figure NF VCE=-5V,IC=-0.1mA, f=1KHz,Rg=1K 4 dB
Delay time td 35 nS
Rise time tr VCC=-3V, VBE=-0.5V IC=-10mA , IB1=-IB2=-1mA 35 nS
Storage time tS 225 nS
Fall time tf VCC=-3V, IC=-10mA IB1=-IB2= 1mA 75 nS

2410121332_CBI-MMDT3946DW_C2828436.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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