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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China General purpose NPN transistor FUXINSEMI MMBT3904 suitable for electronic
China General purpose NPN transistor FUXINSEMI MMBT3904 suitable for electronic

  1. China General purpose NPN transistor FUXINSEMI MMBT3904 suitable for electronic

General purpose NPN transistor FUXINSEMI MMBT3904 suitable for electronic

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Current - Collector Cutoff 100nA
Pd - Power Dissipation 200mW
Transition frequency(fT) 300MHz
type NPN
Current - Collector(Ic) 200mA
Collector - Emitter Voltage VCEO 40V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor NPN 40V 0.2A 300MHz 0.2W Surface Mount SOT-23
Mfr. Part # MMBT3904
Package SOT-23
Model Number MMBT3904

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  1. Product Details
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Product Specification

Current - Collector Cutoff 100nA Pd - Power Dissipation 200mW
Transition frequency(fT) 300MHz type NPN
Current - Collector(Ic) 200mA Collector - Emitter Voltage VCEO 40V
Operating Temperature -55℃~+150℃ Description Bipolar (BJT) Transistor NPN 40V 0.2A 300MHz 0.2W Surface Mount SOT-23
Mfr. Part # MMBT3904 Package SOT-23
Model Number MMBT3904

MMBT3904 TRANSISTOR (NPN)

The MMBT3904 is an NPN transistor designed for general-purpose applications. It is complementary to the MMBT3906 and offers a range of electrical characteristics suitable for various electronic circuits. The device is available in a SOT-23 package.

Product Attributes

  • Brand: FUXIN (implied by www.fuxinsemi.com)
  • Type: NPN Transistor
  • Complementary to: MMBT3906
  • Package: SOT-23

Technical Specifications

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=10A, IE=060V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA, IB=040V
Emitter-base breakdown voltageV(BR)EBOIE=10A, IC=06V
Collector cut-off currentICEXVCE=30V, VEB(off)=3V50nA
Collector cut-off currentICBOVCB= 60V, IE=0100nA
Emitter cut-off currentIEBOVEB=5V, IC=0100nA
DC current gainhFE(1)VCE=1V, IC=10mA100300
hFE(2)VCE=1V, IC=50mA60
hFE(3)VCE=1V, IC=100mA30
Collector-emitter saturation voltageVCE(sat)IC=50mA, IB=5mA0.3V
Base-emitter saturation voltageVBE(sat)IC=50mA, IB=5mA0.95V
Transition frequencyfTVCE=20V,IC=10mA, f=100MHz300MHz
Delay timetdVCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA35ns
Rise timetrVCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA35ns
Storage timetsVCC=3V, IC=10mA, IB1= IB2=1mA200ns
Fall timetfVCC=3V, IC=10mA, IB1= IB2=1mA50ns
Collector-Base VoltageVCBO60V
Collector-Emitter VoltageVCEO40V
Emitter-Base VoltageVEBO6V
Collector CurrentIC200mA
Collector Power DissipationPC200mW
Thermal Resistance From Junction To AmbientRJA625/W
Junction TemperatureTj150
Storage TemperatureTstg-55+150

2010271837_FUXINSEMI-MMBT3904_C908260.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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