| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 300MHz |
| type | NPN |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 40V 0.2A 300MHz 0.2W Surface Mount SOT-23 |
| Mfr. Part # | MMBT3904 |
| Package | SOT-23 |
| Model Number | MMBT3904 |
View Detail Information
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Product Specification
| Current - Collector Cutoff | 100nA | Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 300MHz | type | NPN |
| Current - Collector(Ic) | 200mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 40V 0.2A 300MHz 0.2W Surface Mount SOT-23 |
| Mfr. Part # | MMBT3904 | Package | SOT-23 |
| Model Number | MMBT3904 |
The MMBT3904 is an NPN transistor designed for general-purpose applications. It is complementary to the MMBT3906 and offers a range of electrical characteristics suitable for various electronic circuits. The device is available in a SOT-23 package.
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=10A, IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | ||
| Collector cut-off current | ICEX | VCE=30V, VEB(off)=3V | 50 | nA | ||
| Collector cut-off current | ICBO | VCB= 60V, IE=0 | 100 | nA | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 100 | nA | ||
| DC current gain | hFE(1) | VCE=1V, IC=10mA | 100 | 300 | ||
| hFE(2) | VCE=1V, IC=50mA | 60 | ||||
| hFE(3) | VCE=1V, IC=100mA | 30 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=50mA, IB=5mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=50mA, IB=5mA | 0.95 | V | ||
| Transition frequency | fT | VCE=20V,IC=10mA, f=100MHz | 300 | MHz | ||
| Delay time | td | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| Rise time | tr | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| Storage time | ts | VCC=3V, IC=10mA, IB1= IB2=1mA | 200 | ns | ||
| Fall time | tf | VCC=3V, IC=10mA, IB1= IB2=1mA | 50 | ns | ||
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current | IC | 200 | mA | |||
| Collector Power Dissipation | PC | 200 | mW | |||
| Thermal Resistance From Junction To Ambient | RJA | 625 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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