| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 300MHz |
| type | NPN |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 0.2W Surface Mount SOT-23 |
| Mfr. Part # | MMBT3904 |
| Package | SOT-23 |
| Model Number | MMBT3904 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 300MHz |
| type | NPN | Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 0.2W Surface Mount SOT-23 | Mfr. Part # | MMBT3904 |
| Package | SOT-23 | Model Number | MMBT3904 |
The MMBT3904 is an NPN transistor from ElecSuper, designed for general-purpose applications. It features a Collector-Base Voltage (VCBO) of 60V and a continuous Collector Current (IC) of 200mA, with a power dissipation of 200mW. This transistor offers high stability and reliability, serving as a complementary part to the MMBT3906. It is housed in a compact SOT-23 plastic package, suitable for various mounting positions.
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current-Continuous | IC | 200 | mA | |||
| Collector Power Dissipation | PC | 200 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | TSTG | -55 | 150 | |||
| Thermal Resistance Junction to Ambient | RJA | 625 | /W | |||
| Electrical Characteristics (At TA = 25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=10uA, IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10uA, IC=0 | 6 | V | ||
| Collector cut-off current | ICEX | VCE=30V, VEB(off)=3V | 50 | nA | ||
| Collector cut-off current | ICBO | VCB=60V, IE=0 | 100 | nA | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 100 | nA | ||
| DC current gain | hFE1 | VCE=1V, IC=10mA | 100 | 300 | ||
| DC current gain | hFE2 | VCE=1V, IC=50mA | 60 | |||
| DC current gain | hFE3 | VCE=1V, IC=100mA | 30 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=50mA, IB=5mA | 0.30 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=50mA, IB=5mA | 0.95 | V | ||
| Transition frequency | fT | VCE=20V, IC=10mA, f=100MHz | 300 | MHz | ||
| Delay time | td | VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA | 35 | ns | ||
| Rise time | tr | VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA | 35 | ns | ||
| Storage time | ts | VCC=3V, IC=10mA, IB1=IB2=1mA | 200 | ns | ||
| Fall time | tf | VCC=3V, IC=10mA, IB1=IB2=1mA | 50 | ns | ||
| Classification of hFE | ||||||
| hFE | 100~300 | |||||
| Rank | L | H | ||||
| Range | 100~200 | 200~300 | ||||
| Dimensions and Patterns (SOT-23) | |||
|---|---|---|---|
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | Note |
| A | 0.900 | 1.150 | |
| A1 | 0.900 | 1.050 | |
| b | 0.300 | 0.500 | |
| c | 0.080 | 0.150 | |
| D | 2.800 | 3.000 | |
| E | 1.200 | 1.400 | |
| E1 | 2.250 | 2.550 | |
| e | 0.950 (TYP) | ||
| e1 | 1.800 | 2.000 | |
| L | 0.550 (REF) | ||
| L1 | 0.300 | 0.500 | |
| 0 | 8 | ||
| 0.80 | 2.02 | ||
| 1.90 | 0.60 | ||
| Note: 1. Controlling dimension: in millimeters 2. General tolerance: 0.05mm 3. The pad layout is for reference only 4. Unit: mm | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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