Hefei Purple Horn E-Commerce Co., Ltd.
| Current - Collector Cutoff | 100nA |
| Emitter-Base Voltage(Vebo) | 6V |
| Pd - Power Dissipation | 625mW |
| Transition frequency(fT) | 50MHz |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 300V |
| Description | Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 625mW Through Hole TO-92 |
| Mfr. Part # | MPSA42 |
| Package | TO-92 |
| Model Number | MPSA42 |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Current - Collector Cutoff | 100nA | Emitter-Base Voltage(Vebo) | 6V |
| Pd - Power Dissipation | 625mW | Transition frequency(fT) | 50MHz |
| type | NPN | Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 300V | Description | Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 625mW Through Hole TO-92 |
| Mfr. Part # | MPSA42 | Package | TO-92 |
| Model Number | MPSA42 |
The MPSA42 is an NPN silicon epitaxial planar transistor designed for high voltage switching and amplifier applications. It is recommended to use the complementary PNP transistors MPSA92 and MPSA93.
| Parameter | Symbol | Value | Unit | Min. | Max. |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 °C) | |||||
| Collector Base Voltage | VCBO | 300 | V | ||
| Collector Emitter Voltage | VCEO | 300 | V | ||
| Emitter Base Voltage | VEBO | 6 | V | ||
| Collector Current | IC | 500 | mA | ||
| Power Dissipation | Ptot | 625 | mW | ||
| Junction Temperature | Tj | 150 | °C | ||
| Storage Temperature Range | Tstg | -55 to +150 | °C | ||
| Characteristics at Ta = 25 °C | |||||
| DC Current Gain at VCE = 10 V, IC = 1 mA | hFE | 25 | - | ||
| DC Current Gain at VCE = 10 V, IC = 10 mA | hFE | 40 | - | ||
| DC Current Gain at VCE = 10 V, IC = 30 mA | hFE | 40 | - | ||
| Collector Base Cutoff Current at VCB = 200 V | ICBO | µA | 0.1 | ||
| Collector Base Cutoff Current at VCB = 160 V | ICBO | µA | 0.1 | ||
| Emitter Base Cutoff Current at VEB = 6 V | IEBO | µA | 0.1 | ||
| Emitter Base Cutoff Current at VEB = 4 V | IEBO | µA | 0.1 | ||
| Collector Base Breakdown Voltage at IC = 100 µA | V(BR)CBO | 300 | V | ||
| Collector Emitter Breakdown Voltage at IC = 1 mA | V(BR)CEO | 300 | V | ||
| Emitter Base Breakdown Voltage at IE = 100 µA | V(BR)EBO | 6 | V | ||
| Collector Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA | VCE(sat) | V | 0.5 | ||
| Base Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA | VBE(sat) | V | 0.9 | ||
| Gain Bandwidth Product at IC = 10 mA ,VCE = 20 V, f = 100 MHz | fT | 50 | MHz | ||
| Collector Output Capacitance at VCB = 20 V, f = 1 MHz | Cob | pF | 3 | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!