| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 250MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 300mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT4401 |
| Package | SOT-23 |
| Model Number | MMBT4401 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 250MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 600mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 300mW Surface Mount SOT-23 |
| Mfr. Part # | MMBT4401 | Package | SOT-23 |
| Model Number | MMBT4401 |
The MMBT4401 is a complementary NPN bipolar transistor designed for switching applications. It is a surface mount device housed in a SOT-23 package, offering a compact solution for various electronic circuits.
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | 60 | V | |
| Collector-Emitter Voltage | VCEO | 40 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 600 | mA | |
| Collector Power Dissipation | PC | 300 | mW | TA = 25C |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | V | IC=1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=100uAIC=0 |
| Collector cut-off current | ICBO | 0.1 | uA | VCB=50V, IE=0 |
| Collector cut-off current | ICEX | 0.1 | uA | VCE=35V, VBE=0.4V |
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=5V, IC=0 |
| DC current gain | hFE1 | 20 | VCE=1V, IC=0.1mA | |
| DC current gain | hFE2 | 40 | VCE=1V, IC=1mA | |
| DC current gain | hFE3 | 80 | VCE=1V, IC=10mA | |
| DC current gain | hFE4 | 100-300 | VCE=1V, IC=150mA | |
| DC current gain | hFE5 | 40 | VCE=2V, IC=500mA | |
| Collector-emitter saturation voltage | VCE(sat) | 0.4 | V | IC=150mAIB=15mA |
| Collector-emitter saturation voltage | VCE(sat) | 0.75 | V | IC=500mAIB=50mA |
| Base-emitter saturation voltage | VBE(sat) | 0.95 | V | IC=150mAIB=15mA |
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=500mAIB=50mA |
| Transition frequency | fT | 250 | MHz | VCE=10V,IC=20mA,f=100MHz |
| Delay time | td | 15 | ns | VCC=30V, VBE(OFF)=2V, IC=150mAIB1=15mA |
| Rise time | tr | 20 | ns | VCC=30V,IC=150mA IB1=IB2=15mA |
| Storage time | tS | 225 | ns | VCC=30V,IC=150mA IB1=IB2=15mA |
| Fall time | tf | 60 | ns | VCC=30V,IC=150mA IB1=IB2=15mA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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