| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 350mW |
| Transition frequency(fT) | - |
| type | NPN |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 400V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 400V 200mA 350mW Surface Mount SOT-23 |
| Mfr. Part # | MMBTA44 |
| Package | SOT-23 |
| Model Number | MMBTA44 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 350mW | Transition frequency(fT) | - |
| type | NPN | Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 400V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 400V 200mA 350mW Surface Mount SOT-23 | Mfr. Part # | MMBTA44 |
| Package | SOT-23 | Model Number | MMBTA44 |
The MMBTA44 is an NPN bipolar transistor designed for surface mount applications. It is a complementary part to the MMBTA94, offering high breakdown voltage and low collector-emitter saturation voltage. This device is suitable for various electronic circuits requiring a reliable NPN transistor in a compact SOT-23 package.
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 400 | V | |
| Collector-Emitter Voltage | VCEO | 400 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current (continuous) | IC | 200 | mA | |
| Collector Current (peak) | ICM | 300 | mA | |
| Collector Power Dissipation | PC | 350 | mW | TA = 25C |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | 400 | V | IC=100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 400 | V | IC=1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10uAIC=0 |
| Collector cut-off current | ICBO | 0.1 | uA | VCB=400V, IE=0 |
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=4V, IC=0 |
| DC current gain (hFE1) | hFE1 | 40 | VCE=10V, IC=1mA | |
| DC current gain (hFE2) | hFE2 | 50-200 | VCE=10V, IC=10mA | |
| DC current gain (hFE3) | hFE3 | 40 | VCE=10V, IC=100mA | |
| Collector-emitter saturation voltage (VCE(sat)1) | VCE(sat) | 0.4 | V | IC=1mAIB=0.1mA |
| Collector-emitter saturation voltage (VCE(sat)2) | VCE(sat) | 0.5 | V | IC=10mAIB=1mA |
| Collector-emitter saturation voltage (VCE(sat)3) | VCE(sat) | 0.75 | V | IC=50mAIB=5mA |
| Base-emitter saturation voltage | VBE(sat) | 0.75 | V | IC=10mAIB=1mA |
| Collector output capacitance | COB | 7 | pF | VCB=20V, IE=0, f=1MHz |
| Emitter Input capacitance | CIB | 130 | pF | VEB=0.5V, IC=0, f=1MHz |
| Thermal Resistance Junction To Ambient | RJA | 357 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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