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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China NPN Transistor SOT23 Package FUXINSEMI MMBTA42 Suitable for Switching and
China NPN Transistor SOT23 Package FUXINSEMI MMBTA42 Suitable for Switching and

  1. China NPN Transistor SOT23 Package FUXINSEMI MMBTA42 Suitable for Switching and

NPN Transistor SOT23 Package FUXINSEMI MMBTA42 Suitable for Switching and

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Current - Collector Cutoff 250nA
Pd - Power Dissipation 350mW
Transition frequency(fT) 50MHz
type NPN
Current - Collector(Ic) 300mA
Collector - Emitter Voltage VCEO 300V
Operating Temperature -55℃~+150℃@(Tj)
Description Bipolar (BJT) Transistor NPN 300V 300mA 50MHz 350mW Surface Mount SOT-23
Mfr. Part # MMBTA42
Package SOT-23
Model Number MMBTA42

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  1. Product Details
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Product Specification

Current - Collector Cutoff 250nA Pd - Power Dissipation 350mW
Transition frequency(fT) 50MHz type NPN
Current - Collector(Ic) 300mA Collector - Emitter Voltage VCEO 300V
Operating Temperature -55℃~+150℃@(Tj) Description Bipolar (BJT) Transistor NPN 300V 300mA 50MHz 350mW Surface Mount SOT-23
Mfr. Part # MMBTA42 Package SOT-23
Model Number MMBTA42

MMBTA42 TRANSISTOR (NPN)

The MMBTA42 is an NPN transistor in a SOT-23 package, designed for high performance applications. It features a high breakdown voltage, low collector-emitter saturation voltage, and serves as a complementary part to the MMBTA92 (PNP). The device is suitable for various electronic circuits requiring reliable switching and amplification.

Product Attributes

  • Brand: FUXINSEMICONDUCTOR
  • Package: SOT-23

Technical Specifications

Parameter Symbol Test conditions Min Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 100A,IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB=200V, IE=0 0.25 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain hFE(1) VCE= 10V, IC= 1mA 60
DC current gain hFE(2) VCE= 10V, IC=10mA 200
DC current gain hFE(3) VCE=10V, IC=30mA 60
Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V
Transition frequency fT VCE= 20V, IC= 10mA, f=30MHz 50 MHz
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 5 V
Collector Current -Continuous IC 0.3 A
Collector Power dissipation PC 0.35 W
Thermal Resistance, junction to Ambient RJA 357 /W
Operation Junction and Storage Temperature Range TJ,Tstg -55 +150
Collector Current-Peak ICM 0.5 A

2010271837_FUXINSEMI-MMBTA42_C908262.pdf

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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