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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Plastic Encapsulated Transistor Changzhou Starsea Elec S8550 SOT23 Package
China Plastic Encapsulated Transistor Changzhou Starsea Elec S8550 SOT23 Package

  1. China Plastic Encapsulated Transistor Changzhou Starsea Elec S8550 SOT23 Package

Plastic Encapsulated Transistor Changzhou Starsea Elec S8550 SOT23 Package

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Current - Collector Cutoff 100nA
Emitter-Base Voltage(Vebo) 5V
Pd - Power Dissipation 300mW
Transition frequency(fT) 150MHz
Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 25V
Description Bipolar (BJT) Transistor 25V 500mA 150MHz 300mW Surface Mount SOT-23
Mfr. Part # S8550
Package SOT-23
Model Number S8550

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  1. Product Details
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Product Specification

Current - Collector Cutoff 100nA Emitter-Base Voltage(Vebo) 5V
Pd - Power Dissipation 300mW Transition frequency(fT) 150MHz
Current - Collector(Ic) 500mA Collector - Emitter Voltage VCEO 25V
Description Bipolar (BJT) Transistor 25V 500mA 150MHz 300mW Surface Mount SOT-23 Mfr. Part # S8550
Package SOT-23 Model Number S8550

Product Overview

The S8550 is a plastic-encapsulated transistor designed for general-purpose applications. It is a complementary type to the S8050, offering high stability and reliability. The transistor is housed in a SOT-23 small outline plastic package, suitable for surface mounting. It is rated for a continuous collector current of up to 500 mA and a collector power dissipation of 300 mW.

Product Attributes

  • Package Type: SOT-23 Small Outline Plastic Package
  • Material: Epoxy
  • Flammability Rating: UL 94V-0
  • Mounting Position: Any
  • Marking: DN:S20G73Z072005A1
  • Complementary Type: S8050

Technical Specifications

Parameter Symbol Test Condition Min Max Unit
Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Collector Current-Continuous IC -500 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Thermal resistance From junction to ambient RJA 417 /W
Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)
Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100uA, IC=0 -5 V
Collector cut-off current ICEO VCE=-20V, IB=0 -100 nA
Collector cut-off current ICBO VCB=-40V, IE=0 -100 nA
Emitter cut-off current IEBO VEB=-3V, IC=0 -100 nA
DC current gain hFE(1) VCE=-1V, IC=-50mA 120 400
hFE(2) VCE=-1V, IC=-500mA 50
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.60 V
Base -emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.20 V
Transition frequency fT VCE=-6V, IC=-20mA,f=30MHz 150 MHz

hFE Classification

RANK RANGE
L 120-200
H 200-350
J 300-400

Package Outline

SOT-23 Plastic surface mounted package.

PCB Design Precautions

Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs.


2204121445_Changzhou-Starsea-Elec-S8550_C2992079.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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