| Current - Collector Cutoff | 100nA |
| Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 150MHz |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 25V |
| Description | Bipolar (BJT) Transistor 25V 500mA 150MHz 300mW Surface Mount SOT-23 |
| Mfr. Part # | S8050 |
| Package | SOT-23 |
| Model Number | S8050 |
View Detail Information
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Product Specification
| Current - Collector Cutoff | 100nA | Emitter-Base Voltage(Vebo) | 5V |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 150MHz |
| Current - Collector(Ic) | 500mA | Collector - Emitter Voltage VCEO | 25V |
| Description | Bipolar (BJT) Transistor 25V 500mA 150MHz 300mW Surface Mount SOT-23 | Mfr. Part # | S8050 |
| Package | SOT-23 | Model Number | S8050 |
The S8050 is a high-stability, high-reliability NPN bipolar junction transistor designed for general-purpose applications. It is complementary to the S8550 transistor and is housed in a SOT-23 small outline plastic package. This transistor is suitable for various electronic circuits requiring efficient amplification and switching capabilities.
| Parameter | Symbol | Test Condition | Min | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | ||
| Collector-Emitter Voltage | VCEO | 25 | V | ||
| Emitter-Base Voltage | VEBO | 5 | V | ||
| Collector Current-Continuous | IC | 500 | mA | ||
| Collector Power Dissipation | PC | 300 | mW | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | +150 | ||
| Thermal Resistance (Junction to Ambient) | RJA | 417 | /W | ||
| Collector-base breakdown voltage | V(BR)CBO | IC=100uA, IE=0 | 40 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=100uA, IC=0 | 5 | V | |
| Collector cut-off current | ICEO | VCE=20V, IB=0 | 100 | nA | |
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 100 | nA | |
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 100 | nA | |
| DC current gain | hFE(1) | VCE=1V, IC=50mA | 120 | 400 | |
| hFE(2) | VCE=1V, IC=500mA | 50 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA, IB=50mA | 0.60 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=500mA, IB=50mA | 1.20 | V | |
| Transition frequency | fT | VCE=6V, IC=20mA,f=30MHz | 150 | MHz |
| RANK | RANGE |
|---|---|
| L | 120-200 |
| H | 200-350 |
| J | 300-400 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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