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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China SOT23 packaged Chao He MMBT3906 transistor designed for small signal switching
China SOT23 packaged Chao He MMBT3906 transistor designed for small signal switching

  1. China SOT23 packaged Chao He MMBT3906 transistor designed for small signal switching

SOT23 packaged Chao He MMBT3906 transistor designed for small signal switching

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Current - Collector Cutoff 100nA
Emitter-Base Voltage(Vebo) 5V
Pd - Power Dissipation 200mW
Transition frequency(fT) 300MHz
type PNP
Current - Collector(Ic) 200mA
Number 1 PNP
Collector - Emitter Voltage VCEO 40V
Operating Temperature -55℃~+150℃
Description 200mW PNP 200mA 40V SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # MMBT3906
Package SOT-23
Model Number MMBT3906

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  1. Product Details
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Product Specification

Current - Collector Cutoff 100nA Emitter-Base Voltage(Vebo) 5V
Pd - Power Dissipation 200mW Transition frequency(fT) 300MHz
type PNP Current - Collector(Ic) 200mA
Number 1 PNP Collector - Emitter Voltage VCEO 40V
Operating Temperature -55℃~+150℃ Description 200mW PNP 200mA 40V SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # MMBT3906 Package SOT-23
Model Number MMBT3906

Product Overview

The MMBT3906 is a small signal PNP transistor encapsulated in a SOT-23 surface-mounted device (SMD) plastic package. It is complementary to the MMBT3904 and is ideally suited for automatic insertion and general-purpose switching applications. This transistor offers a collector current of -0.2A and a collector-base voltage of -40V.

Product Attributes

  • Brand: CHAOHE MICROELECTRONICS CO., LTD.
  • Model: MMBT3906
  • Package: SOT-23
  • Material: Halogen free
  • Flammability Rating: UL 94V-0
  • Reel Size: 7 inches
  • Quantity per Reel: 3,000pcs
  • Marking Code: 2A

Technical Specifications

Symbol Parameter Value Unit Test Conditions
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -200 mA
PC Collector Power Dissipation 200 mW
RJA Thermal Resistance From Junction To Ambient 625 /W
TJ,Tstg Operation Junction and Storage Temperature Range -55+150
V(BR)CBO Collector-base breakdown voltage -40 V IC=-10A, IE=0
V(BR)CEO Collector-emitter breakdown voltage -40 V IC= -1mA, IB=0
V(BR)EBO Emitter-base breakdown voltage -5 V IE= -10A, IC=0
ICBO Collector cut-off current -100 nA VCB= -40 V, IE=0
ICEX Collector cut-off current -50 nA VCE=-30V, VBE(off)=-3V
IEBO Emitter cut-off current -100 nA VEB= -5V, IC=0
hFE1 DC current gain 100 - 300 VCE=-1V, IC= -10mA
hFE2 DC current gain 60 VCE= -1V, IC=-50mA
hFE3 DC current gain 30 VCE= -2V, IC=-100mA
VCE(sat) Collector-emitter saturation voltage -0.3 V IC=-50mA, IB=-5mA
VBE(sat) Base-emitter saturation voltage -0.95 V IC= -50mA, IB=-5mA
fT Transition frequency 300 MHz VCE=-20V,IC=-10mA,f=100MHz
td Delay Time 35 nS VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA
tr Rise Time 35 nS VCC=-3V,IC=-10mA IB1=IB2=-1mA
ts Storage Time 225 nS VCC=-3V,IC=-10mA IB1=IB2=-1mA
tf Fall Time 75 nS VCC=-3V,IC=-10mA IB1=IB2=-1mA
Symbol Dimension Min Nom Max Unit
A 0.9 1.05 1.2 mm
A1 0.0 0.05 0.1 mm
A2 0.9 1.00 1.10 mm
A3 0.55 0.60 0.65 mm
b 0.30 0.40 0.50 mm
c 0.10 0.11 0.12 mm
D 2.80 2.90 3.0 mm
E 2.25 2.40 2.55 mm
E1 1.20 1.30 1.40 mm
e 1.8 1.9 2.0 mm
L 0.30 0.40 0.50 mm
L1 0.475 0.55 0.625 mm
0 3 6 o

2511071025_Chao-He-MMBT3906_C51953475.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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