| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 100MHz |
| type | PNP |
| Current - Collector(Ic) | 100mA |
| Description | Bipolar (BJT) Transistor PNP 100mA 100MHz 0.2W Surface Mount SOT-23 |
| Mfr. Part # | BC856 B |
| Package | SOT-23 |
| Model Number | BC856 B |
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Product Specification
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 100MHz |
| type | PNP | Current - Collector(Ic) | 100mA |
| Description | Bipolar (BJT) Transistor PNP 100mA 100MHz 0.2W Surface Mount SOT-23 | Mfr. Part # | BC856 B |
| Package | SOT-23 | Model Number | BC856 B |
The ElecSuper BC856/BC857/BC858 series are PNP transistors in a SOT-23 plastic-encapsulate small outline package. These complementary transistors to BC856/BC857/BC858 offer a power dissipation of 200mW and are ideally suited for automatic insertion. They are designed for applications requiring VCBO ratings from -30V to -80V and a continuous collector current (IC) of -100mA.
| Model | Marking | VCBO (V) | VCEO (V) | IC (mA) | PC (mW) | hFE (Min/Typ) | VCE(sat) (V) | VBE(sat) (V) | COB (pF) | fT (MHz) |
|---|---|---|---|---|---|---|---|---|---|---|
| BC856A | 3A | -80 | -65 | -100 | 200 | 125 / 250 | -0.50 | -1.10 | 4.5 | 100 |
| BC856B | 3B | -80 | -65 | -100 | 200 | 220 / 475 | ||||
| BC857A | 3E | -50 | -45 | -100 | 200 | 125 / 250 | ||||
| BC857B | 3F | -50 | -45 | -100 | 200 | 220 / 475 | -0.50 | -1.10 | 4.5 | 100 |
| BC857C | 3G | -50 | -45 | -100 | 200 | 420 / 800 | ||||
| BC858A | 3J | -30 | -30 | -100 | 200 | 125 / 250 | -0.50 | -1.10 | 4.5 | 100 |
| BC858B | 3K | -30 | -30 | -100 | 200 | 220 / 475 | ||||
| BC858C | 3L | -30 | -30 | -100 | 200 | 420 / 800 | -0.50 | -1.10 | 4.5 | 100 |
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | (BC856) | -80 | V |
| Collector-Base Voltage | VCBO | (BC857) | -50 | V |
| Collector-Base Voltage | VCBO | (BC858) | -30 | V |
| Collector-Emitter Voltage | VCEO | (BC856) | -65 | V |
| Collector-Emitter Voltage | VCEO | (BC857) | -45 | V |
| Collector-Emitter Voltage | VCEO | (BC858) | -30 | V |
| Emitter-Base Voltage | VEBO | -6 | V | |
| Collector Current-Continuous | IC | -100 | mA | |
| Collector Power Dissipation | PC | 200 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | TSTG | -55~150 | ||
| Thermal resistance from junction to ambient | RJA | 625 | /W | |
| Collector-base breakdown voltage | V(BR)CBO | IC=-10uA, IE=0 (BC856) | -80 | V |
| Collector-base breakdown voltage | V(BR)CBO | IC=-10uA, IE=0 (BC857) | -50 | V |
| Collector-base breakdown voltage | V(BR)CBO | IC=-10uA, IE=0 (BC858) | -30 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-10mA, IB=0 (BC856) | -65 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-10mA, IB=0 (BC857) | -45 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-10mA, IB=0 (BC858) | -30 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10uA, IC=0 | -6 | V |
| Collector cut-off current | ICBO | VCB=-70V, IE=0 (BC856) | -100 | nA |
| Collector cut-off current | ICBO | VCB=-45V, IE=0 (BC857) | -100 | nA |
| Collector cut-off current | ICBO | VCB=-25V, IE=0 (BC858) | -100 | nA |
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -100 | nA |
| Collector output capacitance | COB | VCB=-10V, f=1MHz | 4.5 | pF |
| Transition frequency | fT | VCE=-5V, IC=-10mA, f=100MHz | 100 | MHz |
| Symbol | Dimensions (mm) | Min. | Max. |
|---|---|---|---|
| A | 0.900 | 1.150 | |
| A1 | 0.900 | 1.050 | |
| b | 0.300 | 0.500 | |
| c | 0.080 | 0.150 | |
| D | 2.800 | 3.00 | |
| E | 1.200 | 1.400 | |
| E1 | 2.250 | 2.550 | |
| e | 0.950 | TYP | |
| e1 | 1.800 | 2.000 | |
| L | 0.550 | REF | |
| L1 | 0.300 | 0.500 | |
| 0 | 8 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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